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  • 學位論文

窗層及非晶鍺之鈍化對單接面太陽能電池的影響

Effects of Window Layer and Amorphous Germanium Passivation on Single Junction Solar Cell Performance

摘要


摘要 在這篇論文裡,非晶鍺材料用電子槍蒸鍍技術在玻璃基板上,被採用研究快速熱退火對非晶鍺材料的電和光特性上的影響。在實驗過程中,從250℃到400℃的退火的溫度和相關退火的時間段從1分鐘到10分鐘被選擇。在退火步驟之後,全部樣品被接受光特性的檢查相關於穿透和反射光譜,範圍從400奈米到1500奈米。另外,相對應的吸收系數被計算出來。除了光特性之外,電的特性在全部樣品上實行。 首先,使用氣相磊晶系統成長鍺單接面太陽能電池被運用在學習窗層的效應和帽層蝕刻時間對太陽能電池效率的影響。然後,非晶鍺薄膜被分別地鍍在單接面鍺的太陽能電池上。單接面太陽能電池的鈍化會形成表面影響。至於,本研究的目標是分析單接面鍺的太陽能電池在不同的蝕刻時間在照光AM1.5G下的電流電壓特性。量測的結果顯示帽層的蝕刻展現好的影響對鍺單接面太陽能電池效率。此外,非晶鍺層更展現有效的鈍化效果對鍺單接面太陽能電池。實驗結果的細節和非晶鍺材料的應用被描述在本論文裡對鍺單接面太陽能電池。

關鍵字

太陽能電池 非晶鍺 窗層 鈍化

並列摘要


Abstract In this thesis, the amorphous Ge materials prepared by E-gun deposition technique on the glass substrate are adopted to study the effects of rapid thermal annealing (RTA) on the electrical and optical properties of amorphous Ge material. In the experiments, the annealing temperature ranging from 250°C to 400°C and the associated annealing time lasting from 1min to 10min are selected. After the annealing steps, all the samples are undergone with the optical characterization to check the associated transmission and reflection spectra ranging from 400nm to 1500nm. Besides, the corresponding absorption coefficients are calculated. In addition to the optical characterizations, electric characterizations are conducted onto all the samples. At first, the MOCVD grown Ge SJ solar cell are adopted to study the effects of window layer and etching time of cap layer on the solar cell performance. Then, amorphous germanium layers are evaporated individually on Ge SJ solar cell and passivation formed on the surface, so as to study the AM1.5G I-V characteristics of Ge single-junction solar cell. The measured results indicate that cap layer thickness show great effect on the Ge SJ solar cell performance. Additionally, amorphous Ge layers do show significant passivation effects on the Ge SJ solar cells. The details of the experimental results and the application feasibility of amorphous Ge material for Ge single-junction solar cell are described in this thesis.

參考文獻


[1].M. H. Brodsky, “Relations between Structure and the Optical and Electrical Properties of Amorphous Si and Ge Films”, The J. of Vacuum Science and Technology, Vol. 8 No. 1.
[2].D. S. Shen, J. P. Conde, V. Chu, S. Aljishi, Jeffrey Z, Liu and Sigurd, Wagner, “Amorphous silicon-germanium thin-film photodetector array”, IEEE Electron Device Letters, Vol. 13, n 1, pp.5-7(1992).
[3].Tarui, Hisaki, Tsuda, Shinya and Nanano Soichi, “Recent progress of amorphous solar cell applications and systems”, Renewable Energy, Vol. 8, pp.390-395(1996).
[4].K. L. Chopra and S. K. Bahl, “Structural, Electrical, and Optical Properties of Amorphous Germanium Films”, Physical Review B, Vol. 1, No. 6 (1970).
[5].A. H. Clark, “Electrical and Optical Properties of Amorphous Germanium”, Physical Review, Vol. 154, No. 3(1967).

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