以常壓式有機金屬化學氣相沉積技術沉積氧化鋁薄膜應用於矽質之表面鈍化研究

Study of Silicon Surface Passivation with Aluminum Oxide Films Grown by APMOCVD

吳思增(Sz-Tseng Wu)

指導教授 ： 籃山明

中原大學/工學院/電子工程研究所/碩士(2011年)

https://doi.org/10.6840/CYCU.2011.00244

摘要

隨著太陽能電池朝著薄型化方向製作，使得少數載子於表面之複合速率更加主導太陽能電池的整體效率，為此世界各研究團隊紛紛投入表面鈍化技術之研究藉以降低表面複合速率。本論文將探討以金屬有機物化學氣相沉積系統於單晶矽基板製備氧化鋁薄膜，並導入回火處理這項程序以提高少數載子的生命週期進而改善表面複合速率。
在此實驗中，我們藉由微波反射光導衰變(Microwave-Reflection Photo-Conductance- Decay)技術量測少數載子生命週期並使用電容-電壓量測(capacitance-voltage measurement)藉以計算固定氧化層電荷密度。我們可以得到相較於未經氧化鋁薄膜表面鈍化處理的晶片少數載子生命週期由16.53 us提升至135.98 us，表面複合速率降至73.54cm/s，固定氧化層電荷密度為-2.32x1012cm-2。

關鍵字

少數載子生命期 ； 表面鈍化 ； 固定氧化層電荷

並列摘要

With the solar cell direction of production is reduce the thickness , it makes the surface recombination velocity more dominant the overall efficiency of solar cells. Therefore, research teams around the world have invested in order to study the surface passivation to reduce surface recombination velocity.
This paper will use the metal organic chemical vapor deposition system to deposite the aluminum oxide thin-film on c-Si substrate, and import the annealing process in order to increase the minority carrier lifetime, and improve the surface recombination velocity.
In this experiment, the minority carrier lifetime measurement is performed using the microwave-reflection photo-conductance-decay (MRPCD) technique, which is capable of determining the lifetime of a silicon wafer. We also used capacitance-voltage measurement to calculate the fixed charge density. After aluminum oxide thin-film passivation step, it shows an increasing in the minority carrier lifetime from 16.53us to 135.98us. The surface recombination velocity downs to 73.54cm/s, and the fixed charge density is -2.32x1012cm-2.

並列關鍵字

surface passivation ； minority carrier lifetime ； fixed charge density

參考文獻

[2] B. Hoex, S. B. S. Heil, E. Langereis, M. C. M. van de Sanden, and W. M. M. Kessels, APPLIED PHYSICS LETTERS 89, 042112 (2006)

[3] J.-F.Lelie`vre ,, E.Fourmond , A.Kaminski , O.Palais , D.Ballutaud, M.Lemiti, Solar Energy Materials & Solar Cells 93 1281–1289 (2009)

[4] S. Dauwe, L. Mittelstädt, A. Metz, and R. Hezel, Prog. Photovoltaics 10,271 (2002)

[6] J. Benick, B. Hoex, M. C. M. van de Sanden, W. M. M. Kessels, O. Schultz, and S. Glunz, Appl. Phys. Lett. 92, 253504 (2008)

[7] B. Hoex, J. Schmidt, R. Bock, P. P. Altermatt, M. C. M vande Sanden, and W. M. M. Kessels, Appl. Phys. Lett. 91,112107 (2007)