製程條件對鋁誘發非晶矽薄膜結晶影響之研究

Study of Aluminum Induced Crystallization with Different Process Conditions on Amorphous Silicon Film

粘志成(Chih-Cheng Nien)

指導教授 ： 朱孝業 ； 陳恕行

崑山科技大學/工程學院/機械工程研究所/碩士(2005年)

https://doi.org/10.6828/KSU.2005.00060

摘要

本研究是在玻璃基板製備低溫多晶矽薄膜，以及其電性和機械性質之量測為主要研究方向。
本研究之第一部分係針對二種不同厚度之鋁膜及非晶矽膜以不同的退火時間來探討多晶矽薄膜之各項特性，另一部分是在濺鍍製程中，藉由控制直流磁控濺鍍機之以直流功率沉積不同表面粗糙度的鋁金屬膜，探討不同表面粗糙度的鋁膜對金屬誘發結晶的多晶矽膜之影響。從研究結果中得知，退火時間達到1小時之後，其多晶矽膜之XRD矽峰值強度之變化便由大幅上升而趨於平緩，顯示1小時可做為誘發多晶矽膜完全結晶之最少時間。另外在不同濺鍍功率測試結果得知，濺鍍功率為200 W至400 W是多晶矽薄膜殘留應力較小之最佳濺鍍功率範圍，觀察發現在超過800 W時所濺鍍薄膜殘留之壓縮應力過大容易造成多晶矽薄膜破裂。

關鍵字

鋁金屬誘發再結晶 ； 低溫多晶矽 ； 多晶矽 ； 退火時間 ； 殘留應力 ； 濺鍍功率

並列摘要

This study analyzes the material, mechanical and electrical properties of aluminum induced crystallization of poly-silicon film with different process conditions. The process conditions selected to be variables are the annealing period of time, the film thickness of aluminum and silicon layers, and the DC powers of sputter of aluminum film deposition. The poly-crystalline grain size and profile, surface roughness, residual stress of the film, surface and cross-sectional morphology are observed and analyzed.
The results show that the least time period required for fully annealed will be about one hour. The root mean square surface roughness will increase proportionally with the DC power in Al film sputtering. The film residual stress will also increase proportionally with the surface roughness in the compressive direction. As the DC power increase to 1600 W, the poly-cryatalline silicon film will crack owning to extensive compressive residual stress of the film. The power suggested for DC sputter is between 200 W from the viewpoint of least residual stress of the film.

並列關鍵字

sputtering power ； poly-crystalline silicon ； aluminum induced crystallization ； low temperature poly silicon ； annealing time.

參考文獻

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