- 學位論文
奈米金誘發非晶矽薄膜結晶應用於光電元件之研究
The study of polysilicon film induced by nano gold and its application on optic-electronic device
摘要
本論文係研究利用不同製程製作之奈米金誘發非晶矽( a-Si )薄膜進行金屬誘發再結晶(MIC)形成多晶矽( poly-Si )薄膜，以供光電元件用之技術，並討論其微結構與電性之研究。首先在Si基板上以電漿助長化學汽相沉積( PECVD )系統成長 a-Si 薄膜，然後將不同製程參數之奈米金粒子鍍覆到試片上，最後再作不同時間之退火製程處理。 穿透式電子顯微鏡(TEM)用以觀察奈米金顆粒大小，動態光散射粒徑分析儀(DLS)用以量測奈米金粒子粒徑分佈。誘發之試片以X光繞射分析儀（XRD）進行結晶性分析，確認Si的結晶面存在與否，以拉曼光譜分析驗證多晶之存在，並以場發射式電子顯微鏡（FE-SEM）觀察其表面結構與斷面結構。最後誘發結晶薄膜之載子移動率由霍爾測得，並以直流電性量測儀量測其電流-電壓的特性。
並列摘要
In this thesis, nano gold particles made from different process are used in inducing anisotropic amorphous silicon ( a-Si ) thin film to crystallize polycrystalline silicon ( poly-Si ) films for application on optpelectronic device. Plasma enhanced chemical vapor deposition ( PECVD ) is used to growa-Si on the surface of the wafer, and then nano gold particles made from different process with different parameters coated on the a-Si films. Finally, the a-Si films with nano gold particle are annealed with different temperatures to relive the thermal stress. In ths study, transmission electron microscopy (TEM) is used to observe the size of nano metal particles, and then the dynamic light scattering (DLS) is used to analyze the distribution of nano metal particles. XRD and Raman spectra analysis are used to identify the crystallinity of specimens made under different annealing time and temperatures. The surface and cross-section observation are observed and discussed via the field emission scanning electron microscopy (FE-SEM). Finally, carrier mobility of the induced polysilicon film is examined by Hall measurement and the the magnitude of leakage current of poly silicon film characterized by semiconductor analyzer HP4145 in our study.