鋁矽混合靶材對不同鋁矽膜厚度之結晶性之探討

The Crystallinity Study of the Effect of Silicon and Aluminum Film Thickness with Mix Sputtering Target in Aluminum Induced Crystallization Method

尹龍兒(Long-er Yiz)

指導教授 ： 朱孝業

崑山科技大學/工程學院/機械工程研究所/碩士(2011年)

摘要

本研究以金屬誘發多矽結晶之方法，研究不同膜厚度與退火時間對鋁誘發非晶矽結晶的影響，本研究中，將鋁矽混合靶以濺鍍的方式沉積不同厚度之鋁矽混合膜於玻璃基板上，其膜厚分別為150 nm、300 nm、450 nm、600 nm，並在此鋁矽混合膜的上方或是下方再沉積150 nm之鋁膜或是矽膜，再以退火溫度450°C下進行持溫時間1小時的退火處理，並於鋁蝕刻過後，以光學顯微鏡、電子顯微鏡、X-Ray繞射分析儀、拉曼光譜儀、FIB與TEM穿透式電子顯微鏡進行量測，以了解與分析其結晶性。
研究結果得知，非晶矽和鋁矽混合膜厚度比例於1:1、1:2、1:3、1:4之下，經1小時退火過程後，皆有明顯的矽膜誘發結晶之跡象，而其中以上層鋁矽混合膜厚度600 nm和下層非晶矽膜厚度為150 nm條件下誘發的結晶最好。

關鍵字

非晶矽 ； 鋁誘發 ； 多晶矽 ； 鋁矽混合靶

並列摘要

Aluminum induced crystallization (AIC) of silicon has been a promising approach in the study of fabrication of low temperature polycrystalline silicon film. In this study, we used a Si-Al mixed target of sputter to analyze the effect of various Al-Si mixed film thickness and the annealing time on the crystallinity of the Si film with AIC method. Single layer of Al-Si mixed layer and double layer of Al-Si mixed layer and Si (or Al) layer had been fabricated. Their crystallinity was checked by X-ray diffraction, Raman spectra, and transmission scanning microscope. We changed the Al-Si mixed film thickness, 150 nm, 300 nm, 450 nm, and 600 nm, respectively. Another 150 nm-thick Al or Si film was deposited on top or bottom if this Al-Si mixed film. All the specimens were all annealed under an annealing temperature of 450°C for 1 hour.
Results show that all the specimens with different Al-Si mixed film thicknesses can induce Si crystallization. It showed that the crystallinity is the best with the film structure of Al-Si mixed (600 nm)/Si (150 nm)/SiO2 (2 μm)/Glass among all the specimens fabricated in this study.

並列關鍵字

Amorphous silicon ； Aluminum induced crystallization ； AIC ； Polycrystalline silicon ； Al-Si mixed target

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