- 學位論文
奈米金粒子誘發多晶矽薄膜之研究
Study of polysilicon film induced by nano Au on armorphous silicon film
摘要
本論文係研究利用奈米金粒子( Au )誘發非晶矽( a-Si )薄膜進行橫向結晶形成多晶矽( poly-Si )薄膜以供光電元件用之技術。首先利用直接還原法還原奈米金粒子，接下來在石英玻璃上以電漿助長化學汽相沉積( PECVD )系統成長 a-Si 薄膜，然後將還原的奈米金粒子鍍覆到試片上。最後再作不同時間之退火製程處理。並由 SEM、XRD、I-V直流量測系統等儀器探討矽結晶的型態及可能的形成機制。 當 a-Si 薄膜開始橫向結晶形成 poly-Si ，此即為金屬橫向誘發結晶( MILC：Metal Induced Lateral Crystallization )技術。此技術的特點在於所成長的多晶矽晶粒的橫向長度大於縱向的寬度。因此可減少橫向的晶界（ Grain Boundary ）數目，有利於光電元件如 TFT-LCD 的橫向電流傳輸。
關鍵字
none並列摘要
In this thesis, nano gold powder, (Au), triggered anisotropic amorphous Silicon, ( a-Si ), thin film is applied for the research of crystallized polycrystalline silicon ,( poly-Si ), films on optpelectronic device. This process first utilizes direct-reduction process to exchange gold ions to gold atoms. Next, by using plasma enhanced chemical vapor deposition, ( PECVD ), a-Si is grown on the surface of the wafer, then thermal evaporates nano gold powder ( Au ) on the testing wafer. Finally, processes the wafer in different annealing temperature to relive the thermal stress and by using instruments, such as SEM, and XRD to explore silicon crystal structure and possible repeated configuration. Anisotropic crystallized polycrystalline silicon, ( poly-Si ), formed by amorphous silicon, ( a-Si ), thin film is so call metal-induced lateral crystallization ( MILC ), technology. The advantage of MILC is the lateral growth of the crystallized polycrystalline silicon, ( poly-Si ), films is greater then the vertical growth therefore, the number of grain boundary is greatly reduced which is beneficial for optpelectronic device for instance TFT-LCD lateral current transfer.