摘要 平面電子發射光源(Flat Electron Emission Lamp, FEEL)為一種無汞且均勻發光之光源。元件組成包含陰極為FTO(fluorine-doped tin-oxide)透明導電玻璃,陽極為FTO透明導電玻璃上塗佈螢光粉及玻璃間格物所組成。其發光方式是利用電子撞擊螢光粉而發光,電子來源由氣體游離之自由電子,以及離子撞擊陰極所產生之二次電子。由於離子不斷撞擊陰極材料,導致陰極被破壞。本論文選擇氧化鎂做為陰極FTO透明導電玻璃之保護材料。因氧化鎂具有耐離子轟擊、對可見光穿透率高及較高的二次電子發射係數等優點,故將氧化鎂應用於平面電子發射光源。本研究使用磁控射頻濺鍍法製作氧化鎂薄膜,藉由改變濺鍍功率、基板溫度與退火溫度,探討不同製程氧化鎂薄膜對於平面電子發射光源的影響。
Abstract Flat Electron Emission Lamp, FEEL, is a mercury-free and uniform light source. Typically, FEEL consists of a transparent and conductive film on glass acted as cathode; a phosphor coated FTO glass as anode; glass spacer. The emitted photon of FEEL comes from the phosphor powders excited by injection electrons. The electrons can be sourced from gas ionized free electron and the secondary electrons from the bombardment of ionized gases to the cathode material. However, due to the continuously electron bombardment, the cathode material will be destroyed. In this research, we adapted magnesium oxide (MgO) as protection layer on fluorine-doped tin-oxide (FTO) transparent contact glass as cathode structure. MgO material has high protection ability of ion-bombardment, high optical transmission and large secondary electron emission coefficient, so device had higher efficiency is expected. RF magnetron sputtered MgO film with different sputtering powers, substrate temperatures and annealing temperatures was experimentally performed and realized in this thesis. The influence of different MgO films to device was researched and discussed.