我們利用不同波長的雷射光來分析三接面太陽能電池的電流電壓特性曲線圖隨時間變化的關係,研究其缺陷侷限載子之能量與侷限速度對時間之關係,並利用變溫之方法固定一時間差探討其侷限能量隨溫度之變化,並與變溫的特性圖做比較,並利用文獻逐一驗證我們的三接面太陽能電池出現kink效應之原因,推測我們樣樣品產生kink效應的可能原因。 在不同本質層厚度的量測,找出單接面太陽能電池最佳化的本質層厚度,並利用界面複合速度與效率之關係式分析其優化之原因,並選定本質層厚度為5nm的樣品,量測其載子逃脫隨偏壓變化主導之機制,並且與界面複合速度隨偏壓變化之關係,探討元件中載子的傳遞與轉換。
We report the time dependent current-voltage (I-V) curve of triple junction InGaP/InGaAs/Ge solar cells under irradiation with different wavelength. The time-dependent trap energy and surface trap velocity of defects, and the temperature dependent trap energy in the triple junction solar cell were investigated. A kink effect in I-V curve is observed at low temperature, originating from the defects in the top subcell. In addition, we try to find out the suitable intrinsic layer thickness in the single-junction GaAs solar cell. According to the measurement of conversion efficiencies, the surface recombination velocities, and the carrier escape mechanism , the suitable thickness of intrinsic layer is 5nm in PIN GaAs solar cell.