以迴旋濺鍍法沉積氮化鋁薄膜及其矽摻雜之研究

Fabrication Study of Undoped and Si-doped AlN Thin Films Prepared by Helicon Sputtering Method

陳弘修(Hong-Xiu Chen)

指導教授 ： 高慧玲

中原大學/工學院/電子工程研究所/碩士(2012年)

https://doi.org/10.6840/cycu201200706

摘要

本實驗室過去在研究AlN薄膜特性與其光電元件的研製，皆具有豐富的經驗與心得，但為了將AlN薄膜做更多的應用，如高功率元件或深紫外光光電元件之研製，提升AlN薄膜的品質與提升薄膜的導電度，將成為首先必須克服的課題。
薄膜品質得提升，將藉由調整製程參數來改善，並藉由XRD的量測來佐證，並藉由ω-scan半高寬結果，估算出成長溫度500 ℃之本質AlN，薄膜中螺旋型差排密度為9.49×109 cm-2而刃型差排密度為2.07×1011 cm-2。
AlN薄膜導電度的提升，將藉著摻雜矽原子來達到目的，本論文嘗試以helicon sputtering system進行AlN之摻雜，藉由矽、鋁靶材面積比例的控制，實現操控矽原子摻雜量的目標。成長出的薄膜經由EDS與SIMS量測，確實透露出薄膜內含有矽摻質的成分。薄膜電性量測方面，透過1小時1000 ℃退火，使用1.2 cm矽靶材摻雜之AlN薄膜，最低電阻值降至3.05×109 Ω，而使用1.6 cm矽靶材摻雜之AlN薄膜，其電阻值為4.51×109 Ω。

關鍵字

氮化鋁薄膜 ； 矽摻雜的 AlN薄膜 ； 迴旋濺鍍系統

並列摘要

Our research group has studied AlN thin films for a long time. The thin film growth, as well as the optoelectronic device applications, of AlN has been developed in the past. However, for more applications of AlN thin films, such as high power devices or deep UV optoelectronic devices, to enhance the quality and increase the conductivity of the AlN films have become inevitable issues.

The quality of AlN films have been improved and optimized by adjusting the growth parameters. The crystallinity of the films were characterized by XRD and HRTEM. The dislocation density of AlN films prepared at 500 °C is estimated from the FWHM results of ω-scan. It was found that the screw dislocation density is 9.49×109 cm-2, and the edge dislocation density is 2.07×1011 cm- 2.

In this thesis, Si wafer attached on Al metal target was employed to obtain Si-doped AlN films. From EDS and SIMS results, it was found that the Si dopant concentration can be controlled by changing the area of Si on Al target. Minimum resistance of 3.05×109 Ω was obtained by using 1.2 cm silicon wafer on Al target, while 4.51×109 Ω was obtained for using 1.6 cm silicon wafer attached on Al.

並列關鍵字

AlN thin film ； helicon sputtering system ； Si doping

參考文獻

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