以電漿輔助化學氣相沉積法製備氧化矽 氣體阻障層之研究

Fabrication of SiOX Barrier Coatings Using Plasma Enhanced Chemical Vapor Deposition

吳慧玲(Hui-Ling Wu)

指導教授 ： 魏大欽

中原大學/工學院/化學工程研究所/碩士(2006年)

https://doi.org/10.6840/cycu200600456

摘要

有機發光二極體由於具有自發光性、廣視角、高對比、低耗電、高應答速率、全彩化及製程簡單等優點，被視為最有可能成為下一世代平面顯示器主流。然而，如何在OLED元件上製備阻障層，以增進元件壽命是亟待突破的關鍵技術。
本研究以使用13.56 MHz RF電容偶合平板式電漿反應器，上電極接RF電源供應器(Power supply)，下電極為接地端(Ground electrode)，配有控制進料氣體體流量的質量流量控制器，製備氧化矽氣體阻障層，探討單體流量、載氣配比、電漿功率及反應器腔體壓力等製程參數，對氧化矽/PET複合膜水氣透過率之影響。實驗結果發現，在低單體流量、適當載氣流量(O2)、高功率及低腔體壓力下，氧化矽/PET複合膜擁有良好的阻氣效果，從原始PET機材水氣透過率33.02 g/m2-day可降至5.01 g/m2-day。
相信本研究使用PECVD製備氧化矽/PET複合膜將有可能應用於可撓式有機發光二極體封裝產業。

關鍵字

二氧化矽氣體阻障層 ； 水氣透過率 ； 電漿輔助化學氣相沉積 ； 有機發光二極體

並列摘要

Organic light-emitting diode (OLED) displays require perfect encapsulation against inward permeation of water and oxygen. In order to reduce the rate of permeation of vapors through OLED devices, a barrier layer is needed. SiOX film is a potential candidate for OLED encapsulation.
This study focus on the water permeability of SiOX thin film deposited on PET by plasma enhanced chemical vapor deposition from hexamethyldisiloxane (HMDSO) with oxygen. It was found that the desired dense film was obtained under low HMDSO flow rate, high oxygen concentration, high RF power and low chamber pressure condition. It was also found that the Water Vapor Transmission Rate (WVTR) of bare PET film is 33.02 g/m2-day when measured at 600C, 95%RH and 48 hours. Under optimum condition, the WVTR of SiOX barrier films decreased to a value of 5.01 g/m2-day.

並列關鍵字

Water Vapor Transmission Rate(WVTR) ； Plasma-enhanced chemical vapor deposition (PECVD) ； HMDSO ； Silicon oxide barrier coatings

參考文獻

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