C60與C59N摻雜C60之多晶薄膜的場發射特性

Field Emission Properties of C60 and C60 Doped C59N Polycrystalline Films

徐竹君(Jhu-Jyun Syu)

指導教授 ： 邱寬城

中原大學/理學院/應用物理研究所/碩士(2006年)

https://doi.org/10.6840/cycu200600627

摘要

本文利用電弧放電法，實驗中於腔體通入一定比例之氦氣和氮氣的混合氣體，來分別合成C60 與C59N摻雜C60之粉末，再藉由過濾萃取與管柱液相層析法純化所得粉末，提高粉末純度。然後利用垂直式物理汽相沈積系統，於重摻雜p-type或n-type Si基板上，成長具有場發射性質的C60 與含C59N摻雜的C60多晶薄膜。此外，我們也利用溶液相長晶法，成長表面具針狀結構的C60 薄膜。最後，本文並探討利用不同方式或基板材料成長的各類C60 薄膜與其場發射特性（如門檻電流，場發射因子，電流密度）之關聯。

關鍵字

場發射 ； 起始電場 ； 場發射增強因子 ； 電流密度

並列摘要

The C60 and heterofullerenes C59N powders are synthesized and are further extracted from column liquid chromatography, by a dc-arc furnace in a mixture of nitrogen-helium atmosphere. Then the polycrystalline films of C60 and C60 doped C59N are grown on heavily doped p- and n-type Si substrates by physical vapor deposition (PVD) and solvent evaporation (SE) techniques. The scanning electron microscope (SEM) images are used to study surface morphology of the SE films. In contrast to the rod like morphology for the films grown by SE, the films grown by PVD are very compact with cubic grains. Finally, we investigate the field emission behaviors to find field emission characteristics such as threshold field, field emission enhancement factor and current density with respect to different deposition conditions.

並列關鍵字

threshold field ； field emission enhancement factor current density ； field emission

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