本論文提出與研究新的抑制方案,針對弱耦合差模微帶線以45度角跨越弱耦合差模埋入式微帶線結構。針對所提出的結構,使用3D全波模擬軟體HFSS與CST進行頻域與時域分析,藉由差模轉共模的模態和時域反射波型研究該結構的共模雜訊與反射雜訊。所提出的最新的抑制方案為相互跨越的區域為兩兩垂直並由弱耦合改為強耦合結構,最新的抑制方案降低典型的弱耦合差模微帶線以45度角跨越弱耦合差模埋入式微帶線結構的共模雜訊之峰對峰值約76%~97%,於頻域範圍約0.3GHz~16GHz的差模轉共模模態也有顯著地抑制典型的弱耦合差模微帶線以45度角跨越弱耦合差模埋入式微帶線結構,而相互跨越的差模傳輸線的差模阻抗仍然保持阻抗匹配。此外,使用所提出的改善方案於時域反射波型中有顯著地改善反射雜訊。最後,模擬結果與量測結果相互驗證本輪文所提出的改善方案能有效地抑制典型結構的共模雜訊與反射雜訊。
This work proposes and investigates new noise reduction schemes for reducing CMN and reflection noise in a weakly coupled differential microstrip lines (WCDMLs) that crosses a weakly coupled differential embedded microstrip lines (WCDEMLs) at 45 degrees (also called a “conventional traces crossing structure”). Time- and frequency-domain analyses of the proposed schemes are performed to investigate and reduce the CMN and reflection noise by studying the differential-to-common mode conversion and the time-domain reflection (TDR) waveform using the 3-D full-wave simulator CST and HFSS. The proposed solutions reduce the peak-to-peak amplitude of the CMN in the conventional traces-crossing structure of weakly coupled differential lines, by approximately 76%~97% , while the differential impedances of the two crossing differential lines remain matched. The range of frequencies over which the magnitude of the differential-to-common mode conversions (Sc2d1, Sc4d3, Sc3d1, Sc1d3) are significantly reduced is very wide – about 0.3–16 GHz. Furthermore, the voltage drop (reflection noise) in the TDR waveform is greatly reduced using the proposed designs. Finally, a favorable comparison between the simulated results and measurements verifies the excellent CMN and reflection noise reduction performance of the proposed schemes.