薄膜電晶體之閘極材料的電阻與接觸窗量測

Resistance and test component measurement of Gate Materials for Thin Film Transistor

蔡政憲(Cheng-Hsien Tsai)

指導教授 ： 何青原

中原大學/工學院/機械工程研究所/碩士(2019年)

https://doi.org/10.6840/cycu201900395

摘要

為了提高開口率增加解析度，目前閘極材料多採用三層金屬，三層金屬材料因其優異的電性與低電阻用於TFT元件導線是目前業界的趨勢，因此本論文探討不同閘極金屬使用於氫化非晶矽薄膜電晶體(a-Si:H TFT)的特性，進行各種電性實驗，來驗證三層金屬材料對TFT的各種優勢。在相同設計的元件，比較使用不同閘極金屬材料與相同閘極材料膜厚不同的差異性。從四種不同閘極材料TFT元件ID-VG curve與ID-VD curve與接觸窗電性量測，可得知臨界電壓、載子遷移率、電流開關比與電阻值相關判定TFT元件的重要參數。
在本實驗的比較下，三層金屬閘極元件的臨界電壓、電流開關比與電阻值都較合金閘極元件佳，而同樣的閘極材料膜厚變薄，臨界電壓降低、電阻值會增加。

關鍵字

氫化非晶矽薄膜電晶體 ； 臨界電壓 ； 電阻值 ； 接觸窗

並列摘要

At present, the gate material is mostly made of the metal which is three-layer, in order to increase the Aperture ratio and the resolution. The three-layer metal material is used in the TFT component wire because of its excellent electrical properties and lower resistance. Therefore, this paper discusses different gate metals by using various characteristics of hydrogenated amorphous germanium thin film transistors (a-Si:H TFT), and do different electrical experiments to verify the advantages of the three-layer metal material to the TFT. In the same design of the components, we compare the difference between the different gate materials and also we compare the same gate material in different of film thickness. Start with the four different gate materials TFT elements ID-VG curve and ID-VD curve and contact hole electrical measurement, then it can be known that the threshold voltage, carrier mobility, current switching ratio and resistance value are related to determine the important parameters of the TFT element.
In the comparison of this experiment, the threshold voltage, current switching ratio and resistance value of the three-layer metal gate components are better than those of the alloy gate components. The same gate material, that film thickness of the material is thinned, the threshold voltage is lowered, and the resistance value is increased.

並列關鍵字

hydrogenated amorphous germanium thin film transistor ； threshold voltage ； resistance value ； contact hole

參考文獻

[1] 林壯儒，鎳金屬電極之P型通道氧化錫薄膜電晶體研究，中華大學碩士論文，電機工程學系，2017

[2] 戴亞翔，TFT-LCD 面板的驅動與設計，五南出版社，2006

[3] P. L. Pai and C. H. Ting, “Selective Electroless Copper for VLSI Interconnection,” IEEE Electron Devices Lett. vol. 10, pp.423-425,1989.

[4] C. H. Lee, D. Striakhilev, and A. Nathan, “Stability of nc-Si:H TFTs With Silicon Nitride Gate Dielectric,” IEEE Transactions on Electron Devices, vol. 54, no. 1, pp.45-51, 2007.

[5] C. H. Lee, D. Striakhilev, S. Tao, and A. Nathan, “Top-Gate TFTs using 13.56 MHz PECVD Microcrystalline Silicon,” IEEE Electron Device Letters. vol. 26, no. 9, pp.637–639, 2005.