奈米結構對有機電子元件之影響

本文針對兩個研究方向在此做個報告，其中之一是聚（3-己基噻吩）(poly(3‐hexylthiophene)(P3HT))奈米線化後對垂直式電晶體之影響，另一個是氧化銦錫(indium-tin-oxide(ITO))奈米柱化後對有機發光二極體之影響。　　第一項研究報告中，我們使用直徑約為15 nm的聚合物奈米線做垂直通道的材料，首次實現了聚合物奈米線垂直式電晶體。針對P3HT奈米線利用吸收光譜和掃描式電子顯微鏡研究其特徵。藉由邊際溶劑製備的聚合物奈米線透過數次的旋轉塗佈，來增加電極之間的聚合物層之厚度進而產生飽和輸出電流。透過利用鏈之間具有強交互作用的聚合物奈米線也增加了載子遷移率。藉由射極(emitter)和半導體聚合物之間引入小的電洞注入能障，得到了約為1500的開/關電流比。此元件的工作電壓也小於2伏特。　　然而另一項研究，是以一般市售的ITO基板利用濕式化學蝕刻法製作ITO奈米柱僅需要10分鐘。藉由透射光譜和暗場光學顯微鏡觀察ITO奈米柱的光學性質，並且證實了ITO奈米柱的透射率和光散射特性比ITO膜來得高。將ITO奈米柱進一步的利用在有機發光二極體中的透明陽極。具有ITO奈米柱的有機發光二極體的電流效率和亮度都得到了提升。此性能增強的原因是ITO奈米柱擁有優良的光提取特性。

關鍵字

奈米結構；有機電子元件

並列摘要

In this paper, we report on two research results, one of which is the influences of P3HT (Poly (3-Hexylthiophene)) nanowire on the vertical transistor, and the other is the influences of ITO (indium-tin-oxide) nanorods on organic light emitting diode. In the first research report, we exploited polymer nanowires with diameters about 15 nm as the vertical channel material, to achieve a polymer nanowire vertical transistor for the first time. The characteristics of P3HT nanowires were studied by absorption spectroscopy and scanning electron microscopy. The saturated output current was produced by increasing the thicknesses of the polymer layers between electrodes through repeatedly spin-coating polymer nanowires prepared in a marginal solvent. The carrier mobility was also increased through adoption of polymer nanowires with strong interchain interactions. Using introducing a small hole injection barrier between the emitter and semiconducting polymer, the on/off current ratio of 1500 was obtained. The operating voltage is below 2 V. In the 2nd research report, the wet chemical etching method was used to achieve ITO nanorods in 10 min from commercially available ITO substrate. The optical characteristics of ITO nanorods were studied by transmission spectroscopy and dark-field optical microscopy. It was illustrated that the ITO nanorods had better characteristics of light transmittance and light scattering compared to ITO films. ITO nanorods layer was further used as transparent anode in organic light-emitting diodes. The brightness and current efficiency of the organic light-emitting diode with nanorods layer were increased. The property enhancement is ascribed to the excellent light extraction performance of the ITO nanorods layer.

並列關鍵字

Nanostructure ； Organic ； Electronic ； Devices

參考文獻

[1] C. M. Palumbiny, F. Liu, T. P. Russell, A. Hexemer, C. Wang, P. Müller-Buschbaum. Crystallization: The Crystallization of PEDOT:PSS Polymeric Electrodes Probed In Situ during Printing (Adv. Mater. 22/2015). Adv. Mater. 2015, 27, 3341.

[2] W. H. Lee, J. H. Cho, K. Cho. Control of mesoscale and nanoscale ordering of organic semiconductors at the gate dielectric/semiconductor interface for organic transistors. J. Mater. Chem. 2010, 20, 2549.

[3] J. A. Lim, H. S. Lee, W. H. Lee, K. Cho. Control of the morphology and Structural Development of Solution-Processed Functionalized Acenes for High-Performance Organic Transistors. Adv. Funct. Mater. 2009, 19, 1515.

[4] W. Pisula, A. Menon, M. Stepputat, I. Lieberwirth, U. Kolb, A. Tracz, H. Sirringhaus, T. Pakula, K. Müllen. A Zone-Casting Technique for Device Fabrication of Field-Effect Transistors Based on Discotic Hexa-peri-hexabenzocoronene. Adv. Mater. 2005, 17, 684.

[6] M. Cavallini, C. Albonetti, F. Biscarini. Nanopatterning Soluble Multifunctional Materials by Unconventional Wet Lithography. Adv. Mater. 2009, 21, 1043.

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奈米結構對有機電子元件之影響

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