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  • 學位論文

利用原子力顯微鏡在硒化鋅材料上進行局部氧化之探討

Local oxidation of ZnSe using an atomic force microscope

指導教授 : 王智祥

摘要


我們使用原子力顯微鏡在接觸模式下對硒化鋅表面進行局部氧化以生成氧 化物。觀察包括應用樣品偏壓、探針移動的速度、探針於氧化點上的停留時間以 及環境溼度變化等實驗參數對於氧化物尺寸的影響。 實驗結果顯示,硒化鋅之探針引發氧化作用的臨界電壓為6.24V。電壓和氧 化物的高度及半高寬是成線性成長的關係。氧化物成長的高度會與探針移動的速 度之倒數或是與停留時間成指數增加。氧化物成長速率隨時間增加而快速衰退。 另外在環境溼度不同的情況下,其氧化物在相同的外加偏壓及探針移動速度 時,氧化物高度並不會有明顯的差異,但是氧化物的寬度則會因為環境溼度的增 加而變寬,我們研判環境溼度會影響氧化時探針及樣品之間水橋的橫向尺度。

並列摘要


The local oxidation on ZnSe surface by using atomic force microscope (AFM) under contact mode has been made. The influence of applied bias, tip writing speed, oxidation time and ambient humidity on the oxide size were investigated. Experimental results demonstrated the threshold voltage of tip-induced local oxidation of ZnSe was about 6.24 V. The relation between the oxide height (width)and bias was fitted linearly. The oxide height was increased exponentially with reciprocal of tip writing speed or oxidation time increased. The growth rate of oxide decayed fast as oxidation time increased. Under the same applied bias and tip writing speed, the oxide height were almost the same in different ambient humidity. However, the oxide width was increased as the ambient humidity increased. We think the ambient humidity affected the lateral scale of the water bridge which connect the sample surface and the tip of probe.

參考文獻


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被引用紀錄


陳文駿(2010)。硒化鋅的摻雜濃度對使用掃描式探針顯微鏡進行局部氧化的影響〔碩士論文,中原大學〕。華藝線上圖書館。https://doi.org/10.6840/cycu201000981

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