- 學位論文
硒化鋅的摻雜濃度對使用掃描式探針顯微鏡進行局部氧化的影響
The influence of doping concentration of ZnSe on local oxidation by using scanning probe microscopy
摘要
探針誘發的局部陽極氧化技術是相當有潛力可建構奈米級電子元件的一種新技術，目前在矽與III-V族半導體材料上已有蠻多的實驗結果被提出。 本論文則是針對II-VI族的硒化鋅，使用原子力顯微鏡在接觸模式下對樣品表面進行局部陽極氧化以生成氧化物，並藉由改變施加於樣品的偏壓、掃描探針移動速度以及n型摻雜之濃度來觀察對於氧化物高度的影響。 由實驗結果得知，硒化鋅之局部陽極氧化作用有一臨界電壓，當施加於樣品的偏壓大於臨界電壓時，硒化鋅表面會生成氧化物，氧化物生成的高度會與施加於樣品的偏壓成線性增加的關係，與掃描探針移動速度的倒數成1/4次方的關係，結果與實驗的時間指數模型相符。 當樣品的摻雜濃度越高時，臨界電壓值越高。我們發現氧化物的高度與實驗的時間指數模型中，跟氧化電壓及探針移動速度無關之參數alpha0有關，而alpha0值會隨著摻雜濃度提高而變大。
並列摘要
The tip-induced local anodic oxidation is now a potential technique for nanoelectronic device fabrication. Many studies of silicon and III-V semiconductors have been demonstrated. In this thesis, the tip-induced local anodic oxidation on II-VI ZnSe semiconductors surface by using atomic force microscope (AFM) under contact mode has been made. The influence of applied bias, tip writing speed and the n-type doping concentration on the oxide height were investigated. A threshold voltage for tip-induced local oxidation of ZnSe was observed. Oxidation occurred when the applied bias more than the threshold voltage. The relation between oxide height and bias was fitted linearly. The oxide height was direct proportion to the reciprocal of tip writing speed to the power of 1/4. The experiment results consisted with the empirical power-of-time model. Moreover, the threshold voltage increased with the doping concentration increased. The parameter alpha0 of empirical power-of-time model, which is independent of the applied bias and tip writing speed, was increased with the doping concentration increased.