環境參數對原子力顯微鏡探針引發氧化蝕刻的影響

The Effects of Environment Parameters In AFM Tip Induced Oxidation Lithography

黃郁惠(Yu-Hui Huang)

指導教授 ： 許經夌

中原大學/理學院/應用物理研究所/碩士(2007年)

https://doi.org/10.6840/cycu200700652

摘要

摘要
本論文主要在研究原子力顯微鏡探針微影蝕刻的方法。這是利用電化學氧化還原反應的觀點，在矽晶圓上作探針引發奈米尺度的氧化物圖案。我們改變不同的變因，包括電壓大小、氧化時間、基板表面改質和基板表面溫度，檢測探針引發氧化物的高度、寬度、或體積膨脹的大小。
電壓和氧化時間的總效應將呈現於氧化物體積的大小。電壓和氧化物的高度是成線性成長關係。而氧化物在短時間內急速成長，當時間繼續增加，氧化物的高度和體積大小漸漸達到飽和。時間在1 ~ 512秒的範圍內，2 μm的長條型氧化物成長的高度和時間成指數增加。
基板表面的水膜厚度不同，會對探針引發氧化物的寬度造成很大的影響。水的靜態接觸角量測儀檢測基板改質的結果顯示：APS (3-aminopropyltriethoxysilane) / Si、Si和OTS (octadecyltrichlorosilane) / Si的接觸角分別為23.5o、76.7o和107.6。因此APS / Si有最大的氧化物寬度。此外，我們也改變基板表面的溫度以控制水膜的厚度。我們發現當基板表面溫度愈高時，得到的氧化物寬度愈窄。

關鍵字

氧化蝕刻 ； 原子力顯微鏡蝕刻 ； 探針蝕刻

並列摘要

Abstract

In this thesis, we study the lithography method of atomic force microscopy (AFM) tip-induced oxidation. The method is based on the electrochemical redox point of view and to form nanoscale patterns on silicon wafers. We examine tip-induced oxide height, oxide width and volume expansion with different parameters including voltage, duration time, surface functionalization and surface temperature.
The total effect of voltage and duration time presents on the size of oxide volume. The relation between the oxide height and voltage is fitted linearly. The growth rate of oxide protruded is very rapid in the initial stage, and gradually achieves a saturation value when continuously growing. The direct-log kinetic model is fit to explain the relation between the height of 2μm oxide line and the duration time in the range of 1 to 512 seconds.
Different water layer thickness on the substrate will strongly affect the tip-induce oxide width. The result of water static contact angle shows the property of surface functionalizations: the contact angle are 23.5o, 76.7o and 107.6o respectively for APS (3-aminopropyltriethoxysilane) / Si, Si and OTS (octadecyltrichlorosilane) / Si. Therefore, APS / Si has the widest oxide width compared with that of Si and OTS / Si. On the other hand, we can control the water layer thickness by varying the temperature of substrate surface. We find that the higher temperature of substrate surface, the thinner oxide width we get.

並列關鍵字

tip induced lithography ； AFM lithography ； oxidation lithography

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