隨著電子工業快速的蓬勃發展,電子元件尺寸的要求也日趨微小化、輕薄化,就半導體封裝產業而言,如何在晶片設計時提升其效能及耐久度是一個重要的任務,而在現今的封裝設計技術中,覆晶封裝是最常用且效能好的封裝設計之一。 本研究主要係探討以覆晶基板的熱變形來預測晶片表面輪廓、翹曲及應變趨勢,在此應用中主要係以熱處理的方式使晶片的溫度持續上升。實驗首先使用白光干涉儀量測室溫下試片的初始表面形貌,再利用數位影像相關系統 (DIC) 研究當覆晶基板在特殊烤爐中持續加熱時的翹曲分佈及應變趨勢,最終則以翹曲值加上室溫下的初始形貌來預測高溫時的表面形貌。 實驗結果顯示試片在高溫時確有不規則變形發生,晶片的中心區域會向上翹曲,由表面輪廓的估算值中發現,當溫度上升超過200 時,其與周圍區域的高度差約增加90微米。
Nowadays the expansion of electronic industry is growing rapidly. Requirement to heading the future is improving the size become smaller and lighter. Chip design to improve the performance and durability is a crucial task for semiconductor packaging industries. Flip Chip Package is a kind of modern packaging design technology that always considered improving. Thermal deformation of the flip chip substrate has been studied in this investigation to see the prediction of chip topographic surface profile, warpage and strain tendencies. In the daily application, the chip should have a heat treatment process and the temperature increase when it operated. White light interferometry equipment in this investigation is used for measure the topographic surface profile at room temperature as initial condition of the specimen. Digital Image Correlation (DIC) system has been implemented to investigate the flip chip substrate warpage distribution and strain tendencies during heating up in a special oven. Then the topographic surface profile at high temperature can be predicted by add the warpage value to the topographic surface profile at room temperature. The result showed that the specimen had warpage attitude that the center area of the specimen had been warp up when the temperature increase through 200°C. The center area of the specimen had been deformed up around 90μm from the initial condition.