BPSG薄膜特性分析研究與沉積製程優化

Study of BPSG film characteristics and deposition processing optimization

詹益禎(Yi-Chen Chan)

指導教授 ： 溫武義

中原大學/工學院/電子工程研究所/碩士(2014年)

https://doi.org/10.6840/cycu201400526

摘要

本研究是以電漿強化式化學氣相沈積法(PECVD)沈積金屬前介質層硼磷矽玻璃（BPSG）薄膜，透過傅立葉轉換紅外光譜(FTIR)分析、掃描式電子顯微鏡(SEM)剖面以及表面掃描觀察等手段，探討沉積於不同條件下之BPSG薄膜特性，分析BPSG薄膜之熱流處理後角度與表面缺陷數量。實驗結果說明，在相同熱流條件下，BPSG中硼磷濃度越高可有效獲得較低熱流處理後角度。但延遲進熱流處理時間越長與硼磷濃度越高將生成更多缺陷於表面。我們擬藉由本研究找出熱流處理後角度與表面缺陷的數量之相關性，以求得BPSG薄膜平坦化之最佳製程條件。

關鍵字

平坦化 ； 硼磷矽玻璃薄膜 ； 電漿強化式化學氣相沈積法

並列摘要

In this study, we use plasma enhanced chemical vapor deposition (PECVD) technique to deposite borophosphosilicate glass (BPSG) as the pre-metal dielectric layer. We analyze the thermal flow angle and the number of surface defects of BPSG films with different doping conditions by using Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) cross-sectional and surface observations. The experimental results show that the samples doped with higher concentration of phosphorus and boron can get a lower thermal angle after the same thermal flow conditions. However, a longer delay time for thermal flow processing, and higher doping concentrations of boron and phosphorus for BPSG film will have much more defects on the surface. We manage to optimize the planarization process for BPSG by examining the relationship between the thermal flow post-treatment angle and surface defects found on BPSG films.

並列關鍵字

PECVD ； planarization ； BPSG film

參考文獻

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