Ω型奈米多通道離子感應場效電晶體之研究

The Study of ISFET with Ω-Shape Multiple Nano Channels

盧尚頤(Shang-Yi Lu)

指導教授 ： 陳建亨

國立暨南國際大學/科技學院/電機工程學系/碩士(2014年)

摘要

本論文整合了奈米壓印與離子感應場效電晶體製程，製作出Ω型奈米多通道離子感應場效電晶體，並以 APTES 自組裝單分子層/二氧化矽堆疊式感測薄膜進行研究，以了解Ω型奈米多通道結構之影響。
實驗結果顯示，我們成功整合奈米壓印技術與傳統離子感應場效電晶體製程，製作出頂部線寬約為110nm~220nm，頸部線寬約為70nm~170nm之Ω型奈米多通道離子感應場效電晶體。且由量測的結果發現，Ω型奈米多通道結構的離子感應場效電晶體，展現出較高的靈敏度、較低的遲滯，未來可將其運用在生物感測的應用上。

關鍵字

奈米壓印 ； 離子感應場效電晶體 ； Ω型奈米多通道 ； APTES

並列摘要

In this thesis, the ISFET with the Ω-shape nano-wire channels were fabricated with the nano imprint technology. The characterizations of the ISFET with APTES/oxide stacked sensing membrane were studies.
In our results, the ISFET with the Ω-shape nano-wire channels were fabricated successfully. The Ω-shape nano-wire channels with the top width of about 110~220 nm and the bottom width of about 70~170 nm were fabricated. The sensitivity and hysteresis of ISFET with the Ω-shape nano-wire channels were all improved. This technology will be suitable for the future bio-sensing applications.

並列關鍵字

nano imprint ； ISFET ； Ω-shape nano-wire channels ； APTES

參考文獻

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