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  • 學位論文

單電感雙輸出升壓型轉換器之設計

Design of Single-Inductor Dual-Output Boost DC-DC Converter

指導教授 : 許孟烈

摘要


本論文提出一個單電感雙輸出升壓轉換器晶片設計,應用於能量擷取後的電源管理,以切換式升壓轉換器為主要架構,採用電流控制脈波頻率調變模式。利用單電感儲存能量,以連續導通模式對輸出負載端(VOUT)以及控制電源端(VCC)交替充電,為了確保電路穩定,輸出負載端必須等控制電源端充滿電後才進行充電動作。為了改善類比控制電路因初始供應電壓過低而無法動作之問題,因此採用了可在低電壓操作的數位電路進行初始階段性的升壓動作的方式,待類比控制電路所需的電源電壓穩定後,才開始由類比控制電路進行升壓動作。 本論文採用國家晶片設計中心(CIC)所提供的TSMC 0.18μm 1P6M CMOS製程進行晶片的設計與實現,整體電路輸入電壓範圍為0.5V~1.8V,雙輸出電壓為1.8V以及3V。當輸入電壓0.5V時,最大負載電流可到30mA,轉換效率為80.7%;在輸入電壓1.5V時,最大負載電流可到120mA,轉換效率為88.6%。

並列摘要


This thesis presents a chip design of a single-inductor dual-output (SIDO) DC-DC boost converter with current controlled pulse frequency modulation (PFM), which is applied in power management after the capture of energy. The SIDO operated in continuous conduction mode (CCM) uses a single inductor for storing energy and alternatively delivers the energy to an output loading terminal (VOUT) and a supply voltage controller terminal (VCC). To ensure a stable operation, the supply voltage controller terminal is always charged before the output loading terminal. In order to improve the issue of the analog control circuit in initial low supply voltage, a digital circuit is utilized to start up in initial stage low voltage boost operation. When the supply voltage of the analog control circuit is stable, the analog control circuit starts to take over the boosting operation. The chip designed with TSMC 0.18μm 1P6M CMOS process operates at an input voltage range from 0.5V to 1.8V and maintains two output voltages of 1.8V and 3V. This work achieved an efficiency of 80.7% when the load current is 30mA at the input voltage of 0.5V and an efficiency of 88.6% when the load current is 120mA at the input voltage of 1.5V.

參考文獻


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