二維鈣鈦礦/氧化鋅奈米柱異質接面應用於寬頻光偵測器

Broadband Photodetector based on Two-Dimensional Perovskite/Zinc Oxide Nanorod Heterojunction

蕭連達(Lian-Da Xiao)

指導教授 ： 陳祥

國立暨南國際大學/科技學院/應用材料及光電工程學系/碩士(2022年)

https://doi.org/10.6837/ncnu202200069

摘要

我們已知道有許多種方法可以合成生長氧化鋅奈米柱，例如：化學氣相沉積法（CVD）、金屬有機化學氣相沉積（MOCVD）、物理氣相沉積（PVD）、電子束蒸鍍（E-beam evaporation）、電化學沉積法(ED)、水熱法(Hydrothermal)等。於是我們利用簡易的水熱法，在SiO2基板上合成高質量的氧化鋅奈米柱陣列。首先我們先清洗過SiO2基板，再使用旋塗法(Spin coating)在SiO2基板上製造氧化鋅晶種層，利用水熱法合成了氧化鋅奈米柱。為了提高氧化鋅奈米柱光偵測器的偵測波長範圍作為寬頻光偵測器，我們在氧化鋅奈米柱上堆疊PEA2PbI4二維鈣鈦礦，藉由能隙較小的二維鈣鈦礦增加光偵測器的吸光範圍，我們利用不同濃度的PEA2PbI4二維鈣鈦礦旋塗在氧化鋅奈米柱上面，藉此調控二維鈣鈦礦層的厚度。實驗中進一步分析材料表面形貌、晶體結構和光學性質，於是透過場發射掃描式電子顯微鏡(FE-SEM)、X光繞射分析儀(XRD)、接觸角分析(Contact Angle Meter)、 光致發光光譜儀(PL)、拉曼分析(Raman)、Agilent 4155C半導體參數分析等儀器，對氧化鋅奈米柱及二維鈣鈦礦結構作分析。結果證明，SiO2基板/ZnO奈米柱/PEA2PbI4的結構提高了光偵測波長範圍，優化PEA2PbI4二維鈣鈦礦的厚度後，該元件從紫外光到綠光區間有不錯的元件表現，有希望能應用於光電子元件上。

關鍵字

氧化鋅奈米柱 ； 二氧化矽基板 ； 苯乙基銨碘化鉛 ； 二維鈣鈦礦 ； 表面形貌 ； 寬頻偵測器

並列摘要

There are many ways applied to grow zinc oxide nanorod (ZnO NR). In this work, we use a simple hydrothermal method to synthesize high quality ZnO NR on SiO2 substrate. First, we clean the SiO2 substrate and deposit zinc oxide seed layer on the SiO2 substrate via spin coating. The ZnO NR was further growth form the seed layer by hydrothermal method. In order to increase detection wavelength range of ZnO-based photodetector as a broadband detector, we integrated low-bandgap material of 2D PEA2PbI4 perovskite on the top the of high-bandgap ZnO NRs. The 2D perovskite was spin-coated on the ZnO NR in the moisture-controlled glove box. Field emission scanning electron microscope (FE-SEM), Ⅹ-ray Diffractometer (XRD), contact angle meter, photoluminescence (PL), raman analysis (Raman), and Agilent4155C semiconductor parameter analysis were conducted to analyze the surface morphology, crystal structure and optical properties of two-dimensional perovskite capped ZnO NR. Results indicate that 2D perovskite/ZnO NRs heterojunction can serve as a broadband wavelength detection photodetector. After optimizing the thickness of 2D perovskite onto the ZnO NR, the as-fabricated photodetector exhibited detection wavelength raging from UV to green light with high detection range. This structure is promising for the broadband photodetector.

並列關鍵字

ZnO nanorod ； Silicon dioxide substrates ； Phenethylammonium lead iodide ； two-dimensional perovskites ； surface topography ； broadband detectors

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