4,7-雙（噻吩並[2,3-c]吡咯二硫酮）苯並[2,1,3]噻二唑衍生物材料製成於有機場效電晶體

有機場效電晶體已發展多年，不論是P 型材料或是 N 型材料都是在應用中不可或缺的一部分，但基於特性不同導致 N 型材料的發展遠遠不及 P 型材料。本研究為設計並合成出能在空氣中穩定運作之 N 型有機半導體的小分子材料。我們將 BDT 兩側接上 Thienoimide，並將羰基硫化轉變為硫羰基以降低 LUMO 值，期望能成為空氣中穩定運作的 N 型有機半導體材料。我們成功合成出其延伸物， BTIBT-C2C6 與 BTIBT-C12，兩者的主要差別在於具有不同的烷基測鏈，分別為1-Octyl 與 2-Ethylhexyl，本文也研究了化合物的光學性質、電化學性質與熱穩定性。透過循環伏安法 (CV) 可得 BTIBT-C2C6 與 BTIBT-C12 的 LUMO 能階分別為 -3.80 eV 與 -3.75 eV。根據本研究量測數據顯示，本文所研究之兩化合物，BTIBT-C2C6 與 BTIBT-C12 均有良好的熱穩定性與溶解度，因此在元件的製程上，不僅僅能使用真空蒸鍍的技術來製作，其良好的溶解度對於製作液相製程也是一大優勢，兩化合物在元件的表現上有不錯的潛力，期望能成為 N 型有機半導體材料。

關鍵字

空氣穩定性； N-type 材料；有機場效電晶體

並列摘要

Organic Field-effect transistors have been developed for many years. Both P-type and N-type materials are indispensable parts of the application. However, the development of N-type materials is far less than that of P-type materials. This study is to design and synthesis molecular for N-type OFET in the air. We design and synthesis 4,7-bis(dithiothienoimide)benzo[2,1,3]thiadiazole. To reduce the LUMO value, we converted the imide to thioimide. We successfully synthesized BTIBT-C2C6 and BTIBT-C12. The difference between is their alkyl side chains, which are 1-Octyl and 2-Ethyl-hexyl. The optical properties, electrochemical properties and thermal stability of the compounds were also investigated. The LUMO energy levels of BTIBT-C2C6 and BTIBT-C12 are -3.80 eV and -3.75 eV. According to the data, they have good thermal stability. Therefore, in the process of component, not only vacuum evaporation technology can be used, solution process also can be used base on the good solubility. The two compounds have good potential in organic semiconductor and are expected to be N-type OFET materials.