苯並雙吡咯-2,6-二酮-3,7-雙亞基丙二腈衍生物材料製成可於空氣中穩定操作之 N 型有機場效電晶體

為了開發出在空氣中可穩定操作的 N 型有機半導體材料，我們在本篇論文中以之前實驗室學長發表過的結構，萘二醯胺丙二腈衍生物 NBAM 做為發想，改變整體構型並同時確保材料具有夠低的 LUMO (Lowest Unoccupied Molecular Orbital)，使其成為在空氣中可穩定操作的 N 型有機半導體材料。我們成功合成出 BDPM-Oct、BDPM-But，此二化合物差別在於具有不同的烷基側鏈長，其側鏈分別為 1-Octylamine、1-Butylamine，並且我們也研究了此二化合物的熱穩定性、光學性質和電化學性質。同時也將化合物以不同條件製成有機場效電晶體元件，並且利用 X 光繞射實驗 (XRD) 及原子力顯微鏡 (AFM) 探測半導體層的結晶堆疊與薄膜型態，以探討分子結構與製程條件對元件效能的影響。在其電性表現上，BDPM-Oct 在 40 ℃ 以及 60 ℃ 的基板溫度條件下其載子遷移率分別有 4.6×10-2 cm2 V-1 s-1 以及 3.6×10-2 cm2 V-1 s-1，而 BDPM-But 在 40 ℃ 的基板溫度條件下，甚至能高達 1.31×10-1 cm2 V-1 s-1。可見其 BDPM 材料具有成為在空氣中可穩定操作之 N 型有機半導體元件材料的潛力。

關鍵字

空氣穩定性； N-type材料；有機場效電晶體

並列摘要

Benzodipyrrole-2,6-dione-3,7-diylidenedimalononitrile (BDPM) was synthesized as an active material for use in air-stable n-type organic field-effect transistors (OFETs), in this paper, we think of Naphthalene diamide malononitrile derivative (NBAM), change the core structure and ensure that the material has low enough LUMO (-4.42 eV). We have successfully synthesized BDPM-Oct and BDPM-But. The difference between the two compounds that they have different alkyl side chain lengths, the side chains are Octyl and Butyl, respectively, and we have also studied the thermal stability, optical properties, electrochemical properties of the two compounds. At the same time, the compound is made into a device component under different conditions, and the crystal and film type of the semiconductor layer are detected by X-ray diffraction experiment (XRD) and atomic force microscopy (AFM) to explore the molecular structure and process conditions, impact on component performance. BDPM-Oct have carrier mobility up to 4.6×10-2 cm2 V-1 s-1 and the Ion/off 1.0×103 of devices under ambient conditions. BDPM-But have better device performance, it have highest carrier mobility up to 1.31×10-1 cm2 V-1 s-1 and the best Ion/off 1.0×104 of devices under ambient conditions. This compound possess N-channel charge transport characteristics when used as the active semiconductor in organic field-effect transistors.