液相製程製備可於空氣中穩定操作之有機場效電晶體

以液相製程製做有機場校電晶體的半導體層是近年來的趨勢，其與傳統的蒸鍍製程相比具有低溫製成、成本低廉、延展性佳、大面積製作、製程簡單等優點，未來在軟性電子領域的發展相當有前景。本論文成功的使用液相製程將有機小分子萘二醯胺丙二腈衍生物(NDAM-C2C6)藉由棒塗法塗佈製做出有機場校電晶體元件，其載子遷移率最高可達3.01×10-2 cm2/Vs，由X-ray繞射儀以及原子力顯微鏡進行有機半導體層之薄膜分析，可以觀察到在不同塗佈速度以及基板溫度下其薄膜的結晶與形貌，並探討苯并二噻吩衍生物(BPBDT-C8)和均苯四甲酸衍生物(PyDTI-C8、PyDTI-C6C2、PyDTI-C2C3F7)無法量測出傳遞效率之原因；另外本篇論文也成功的利用控制溶劑蒸氣壓控制晶體生長製作出NDAM-C2C6之單晶元件，載子遷移率可達0.43 cm2/Vs，此外本文也探討利用溶劑交換法生長出之BPBDT-C8晶體其無法製作成可量測之元件的原因。

關鍵字

液相製程；有機場效電晶體

並列摘要

Organic field-effect transistors (OFETs) are attracting ever increasing attention because of their applications for low-cost, large-area, and flexible electronics. To realize the low-cost and large-area organic electronics, OSCs should be processed from solution using the techniques such as spin coating, casting, printing, and bar coating. In this study we have successfully investigated by solution processed OFET. Thin films were prepared by bar coating a dichlorobenzene solution of different derivatives on trichloro(phenyl)silane treated SiO2/Si wafers. The highest mobility of devices was 3.01×10-2 cm2/Vs obtained. X-ray diffractometer (XRD) and atomic force microscope (AFM) to investigate thin film of morphology at different coating speeds and different substrate temperatures. Also we investigated the reasons for the inability to measure the transfer efficiency of Benzodithiophene derivatives (BPBDT-C8) and Pyromellitic Diimide derivatives (PyDTI-C8, PyDTI-C6C2, PyDTI-C2C3F7). In addition, this study has successfully used to control of solvent vapor for control crystal growth to fabricate NDAM-C2C6 single crystal device. The highest mobility was obtained with devices 0.43 cm2/Vs. This study also discusses the reasons why BPBDT-C8 crystals grown by solvent diffusion cannot be measurable device.