合成N型有機場效電晶體材料-雙（噻吩並[3,2-b]-吡咯-6-亞烷基）丙二腈基小分子

Synthesis of Bis(thieno[3,2-b]-pyrrol-6-ylidene) Malononitrile-Based Small Molecules for N-Channel Organic Field Effect Transistors

林仕晉(Shih-Jin Lin)

指導教授 ： 郭明裕

國立暨南國際大學/科技學院/應用化學學系/碩士(2021年)

https://doi.org/10.6837/ncnu202100271

摘要

有機場效電晶體已被研究多年，但是N-Type材料的元件穩定度和載子遷移率仍不及P-Type材料，這是因為N-Type材料在空氣下不穩定所影響，因此本研究以Thiophene fused pyrrole為主，在中間加入Thiophene和Benzene，並在兩端引入氫基降低LUMO值，使其成為空氣穩定的N型半導體材料。
本次研究成功的合成出三種化合物CN-mPTTT-C12、CN-PTB-C2C6、CN-PTBF-C2C6並且分析它們的物理性質，如光化學性質、電化學性質以及熱穩定性。藉由循環伏安法測量可得LUMO分別為-3.89 eV、-3.93 eV、-3.99 eV，可以證明三者皆為空氣穩定的N型半導體材料，在吸收光譜圖三者化合物在薄膜態下都有明顯的紅位移，推測分子是以J型堆疊方式，更有利於液相製程下薄膜態時電子的躍遷。

關鍵字

空氣穩定性 ； N-type材料 ； 有機場效電晶體

並列摘要

Organic Field-Effect Transistor (OFETs) have been studied for many years, but the device stability and carrier mobility of N-Type materials are still inferior to P-Type materials, this is because N-Type materials are unstable in air. In this study we demonstrated the thieno[3,2-b]pyrrole-5,6-dione derivatives and introduced cyano group onto pyrrole to decrease the LUMO value, and make sure it become air-stable N-type OFET material.
This study successfully synthesized three compounds CN-mPTTT-C12, CN-PTB-C2C6 and CN-PTBF-C2C6 and analyzed their physical properties, such as photochemical properties, electrochemical properties and thermal stability. The LUMO value is -3.89 eV, -3.93 eV, and -3.99 eV calculate by cyclic voltammetry, was lower than -3.8 eV, showed air-stable N-type semiconductor materials.
According to UV-Vis, thin film of compound exhibited a large red shift in comparison with that of the solution state film, it is confirmed that the molecules are stacked in a J-shape, which is more conducive to the transition of electrons in the thin film state under the liquid process.

並列關鍵字

Air-stable ； N-type materials ； Organic Field effect Transistors

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