雙-2,2'-[2-(2-氧代吲哚-3-亞基)丙二腈]並雙噻吩衍生物可於空氣中穩定操作之N型有機場效電晶體

Bis-2, 2'-[2-(2-oxoindolin-3-ylidene)malononitrile]thieno[3,2-b]thiophene Derivatives for Air Stable N-Channel Organic Field Effect Transistors

李侃蔚(Kan-Wei Li)

指導教授 ： 郭明裕

國立暨南國際大學/科技學院/應用化學學系/碩士(2018年)

摘要

有機場效電晶體已經被研究許多年，但是N-type材料的載子遷移率及元件穩定性依然遠遠落後於P-type，這是由於N-type材料在空氣中不穩定性所造成的影響，因此本篇論文以Isatin derivatives為主，在中間加入並雙噻吩，並在兩端加上氰基以降低分子的LUMO，使其可以成為空氣中穩定的N行有機半導體之材料。
我們成功合成出BIMTT-C2C6、BAIMTT-C2C6、BAIMTT-C6C10以及BFTMTT-C6C10，並利用循環伏安法(CV)與吸收光譜圖(UV-Vis)可以測得LUMO分別為-4.00、-4.06、-4.02及-4.03 eV，可以證明這些材料為空氣中穩定之N-type有機半導體材料，而能隙(Eg)分別為1.62、1.44、1.69及1.58 eV。
為了可以使材料能夠以液相的方式製程，將材料上的碳鏈從原本的2-Ethylhexylamine換成2-Decanylhexylane來增加其溶解度，並使用棒塗法來製程，再將元件以原子力顯微鏡(AFM)和X光繞射儀(XRD)對於其分子薄膜型態的堆疊加以討論，可以發現在蒸鍍的部分由於分子量太大使得在XRD上的訊號很低；在液相的部分，可以發現AFM上的表面平整度隨速度的增加而降低。
為了探討氧代吲哚丙二腈並雙噻吩衍生物的傳遞效率，我們分別使用蒸鍍與液相兩種方式將材料沉積在表面，由AFM與XRD推測是由於製程時膜的不連續性，使得本篇材料皆無法量測到半導體電性。

關鍵字

有機場效電晶體 ； 氧代吲哚丙二腈並雙噻吩 ； 液相製程

並列摘要

Organic Field-Effect Transistors (OFETs) have been studied for many years, because of their potential applications in large area, flexible, and low cost complementary circuits. The carrier mobility and device stability of N-type is far behind than P-type, this is because of the LUMO of organic materials is higher than H2O and oxygen. In this study we demonstrate the Bis-2,2’[2-(2-oxoindolin-3-ylidene)malononitrile]thieno[3,2-b]thiophene (BIMTT) derivatives and introduce cyano group onto isatins derivative is decrease the LUMO value, and make sure it becomes air-stable N-type OFET material.
We success synthesis of BIMTT-C2C6、BAIMTT-C2C6、BAIMTT-C6C10 and BFTMTT-C6C10, the LUMO value is -4.00, -4.06, -4.02 and -4.03 eV calculate by cyclic voltammetry (CV), is lower than -3.8 eV, showed air-stable, the energy gap is 1.62, 1.44, 1.69 and 1.58 eV.
In order to investigate the charge transport properties of BIMTT derivatives, we create devices by vapor deposition and solution process. The thin films were characterized by atomic force microscopy (AFM) and X-ray diffraction (XRD) to elucidate the relationships between molecular structure, film morphology, and device performance. In vapor deposition showed the XRD peak is weak, because of the molecular weight is too heavy to deposition. In solution process AFM showed the surface morphology is more rough when the bar move more quickly.
Because of the film is not continuity which is showed on AFM and XRD spectroscopy. So all materials in this study not show the semiconductor property.

並列關鍵字

Organic Field Effect Transistors ； Solution Process ； thieno[3,2-b]thiophene

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