萘二醯胺丙二腈衍生物材料製成可於空氣中穩定操作之 
N 型有機場效電晶體

為了開發更具空氣穩定性的 N-type 材料運用在有機場效電晶體中，本篇論文研究中我們以 Bisisatin 為主體去開發可在大氣環境下穩定運作之N型半導體，並將靛紅三號位置上的氧原子以腈基(-CN)取代，試圖降低分子的最低未佔有電子軌域(Lowest unoccupied molecular orbital, LUMO)使得分子能成為空氣下穩定的N型有機場效電晶體之半導體層材料。我們成功合成出萘二醯胺丙二腈衍生物 NDAM-C8、NDAM-C2C6，此二化合物差別在於具有不同的烷基側鏈長，其側鏈分別為1-Octylamine、 2-Ethyl-hexylamine，並且我們也研究了化合物的的熱穩定性、光學性質、電化學性質。同時也將化合物以不同條件裝置於有機場效電晶體元件中，並且利用X光繞射實驗(XRD)及原子力顯微鏡(AFM)探測半導體層的結晶堆疊與薄膜型態，以探討分子結構與製程條件對元件效能的影響。在元件效能表現方面 NDAM-C8 在空氣環境中電子遷移率可以達到 3.03×10-4cm2V-1s-1,電流開關比則達到 4.7×102。而 NDAM-C2C6 表現出較佳的元件效能，在空氣環境中最高電子遷移率可以達到 6.32×10 -1cm2V-1s-1，電流開關比則達到4.0×106。從此研究可知此化合物具有作為N 型有機場效電晶體中半導體層材的潛力。

關鍵字

空氣穩定性； N-type 材料；有機場效電晶體；萘二醯胺丙二腈衍生物

並列摘要

In order to develop more air-stable N-type materials applied to Organic Field-effect Transistors (OFETs), in this study we adopted bisisatin as our main structure to design air stable n-type semiconductor, we substituted the malononitrile at 3-position of isatin in order to decrease low-lying lowest unoccupied molecular orbital (LUMO) energy levels which cause them potential candidates for high- performance n-channel OSCs for application in OFETs. We have successfully synthesized Naphthalene diamide malononitrile Derivatives NDAM-C8 and NDAM-C2C6,and they are different betweem their alkyl side chains which are 1-Octylamine、2-Ethyl-hexylamine respectively, then we investigated their thermo-stability, optical properties, electrochemical properties. Furthermore, we also fabricated our compounds on OFET devices under various conditions, used XRD and AFM to probe crystalline packing or film morphology of semiconductors. NDAM-C8 have carrier mobility up to 3.03×10-4 cm2V-1s- and the I on/off 4.7×102 of devices under ambient conditions.NDAM-C2C6 have better device performance, it have highest carrier mobility up to 6.32×10-1 cm2V-1s-1 and the best I on/off 4.0×106 of devices under ambient conditions. This compound possess N-channel charge transport characteristics when used as the active semiconductor in organic thin-film transistors (OFETs).