K頻道低雜訊功率放大器之設計與實現

Design and Implementation of K-Band Low Noise Amplifier

陳志忠(Chih-Chung Chen)

指導教授 ： 林佑昇

國立暨南國際大學/科技學院/光電科技碩士學位學程/碩士(2014年)

摘要

本論文主要以台積電180奈米CMOS製程來實現K-Band低雜訊放大器。研究主題由以下構成:
論文內容所敘述為應用於K頻帶系統之22~26 GHz低雜訊放大器。為了縮小晶片面積，我們將電路設計成2級串接放大器，以節省成本，此架構的第一級為共源級放大電路，第二級的架構中我們使用一個疊接放大電路來加強訊號的增益，然後在輸入和輸出端使用傳輸線匹配以得到較好的增益和S參數表現。最後在第二級的架構中使用電流共享技術降低功率損耗。

關鍵字

K-頻道 ； 低雜訊放大器 ； 電流共享 ； 傳輸線

並列摘要

This thesis mainly utilizes standard TSMC 180nm CMOS process technology to implement up-conversion mixers for W-band. Constituted by the following research topics:
In the paper, a 22~26 GHz low noise amplifier is designed for K-band system. For the sake of reducing chip size and cost, we design a two stage cascade amplifier. In the first stage we use a common source circuit. In order to get sufficient gain, we use a cascode circuit in the second stage. Then we use transmission line technique at the input and output term to achieve flat high gain (S21), and better “S-Parameter” performances. Finally, the current sharing technology to reduce the power dissipation in the second stage of the architecture manipulation

並列關鍵字

K-band ； Low Noise Amplifier ； current sharing ； transmission line

參考文獻

[1] 林佑昇,邱弘緯,梁效彬編著(2011):RFID 晶片設計。

[2] To-Po Wang Member.“A Low-Voltage Low-Power K-band CMOS LNA Using DC-Current-Path Split Tehnology”IEEE MICROWAVE AND WIRELESS COMPONENTS LETTER, VOL 20, NO.9, SEPTEMBER 2010

[3] Mohamed El-Nozahi, Student Member, IEEE, Edgar Sanchez-Sinencio, Fellow, IEEE, and Karmran Entesari, Member,IEEE “A Millimeter-Wave(23-32GHz) Wideband BiCOMS Low-Noise Amplifier” IEEE JOUENAL OF SOLID-STATE CIRCUITS, VOL.45, NO.2, FEBRUARY 2010.

[4] Van der Heijden, E.; Veenstra, H.; Hartskeerl, D.; Notten, M.; van Goor, D “Low Noise Amplifier with Integrated Balun for 24GHz Car Radar” 23-25 Jan. 2008 Page(s):78 - 81 Digital Object Identifier 10.1109/SMIC.2008.26

[5] Chen-Yuan Chu; Chien-Cheng Wei; Hui-Chen Hsu; Shu-Hau Feng; Wu-Shiung Feng; “A 24GHz low-power CMOS receiver design” Circuits and system. 2008. ISCAS 2008. IEEE International symposium on 18-21 Page(s):980 – 983, May 2008.