室溫低真空射頻電漿輔助式脈衝式雷射沉積氧化鋅薄膜

Low vacuum, room temperature RF-plasma enhanced pulsed laser deposition of zinc oxide thin films

周宇珏(Yu-Chueh Chou)

指導教授 ： 孫台平

國立暨南國際大學/科技學院/電機工程學系/碩士(2012年)

摘要

氧化鋅 (zinc oxide, ZnO)薄膜近年來受到各界探討，由於氧化鋅屬於寬能隙II-VI族半導體。氧化鋅具有良好的光電及壓電特性、便宜和無毒。製作方式相當多樣，化學氣相沉積 (chemical vapor deposition, CVD)、射頻濺鍍法 (radio frequency sputtering)和脈衝式雷射沉積(pulsed laser deposition, PLD)。脈衝式雷射沉積溫度低且具有良好的化學計量比且容易控制。
本論文利用脈衝式雷射沉積和射頻電漿輔助式脈衝式雷射沉積 ( RF-plasma
enhanced PLD, RF-PEPLD )製備氧化鋅薄膜於玻璃和矽基板上。分析不同環境下成長氧化鋅薄膜的結構與光學特性，而射頻電漿輔助式脈衝式雷射沉積氧化鋅薄膜具有良好品質、提升鍍膜速度和增加鍍膜面積。

關鍵字

氧化鋅 ； 射頻電漿輔助式脈衝式雷射沉積

並列摘要

Zinc oxide (ZnO) has been investigated widely in recent years, because it is a wide band gap semiconductor. ZnO exhibits good photoelectric, piezoelectric, inexpensive, and nontoxic. Several technique such as chemical vapor deposition (CVD), radio frequency (RF) sputtering, and pulsed laser deposition (PLD). The PLD technique has advantages, such as crystallization of films at lower temperature, easily controlled and good stoichiometry transfer.
In this thesis, we deposited ZnO thin films on glass and silicon substrates by PLD and radio frequency (RF) plasma-enhanced PLD (RF-PEPLD) at room temperature and low vacuum.
We analysis the crystal structures and optical properties of the ZnO films were characterized by changing the fabrications conditions. The results demonstrate that good crystal quality, highly deposition rate and large deposition area of the ZnO thin films were improved with the help of RF plasma.

並列關鍵字

ZnO ； RF-PEPLD

參考文獻

1. Y. M. Lu, “Transparent conductive thin film,”(2010).

Available: http://goo.gl/mDCZL

2. 黃敬佩，ITO導電玻璃及相關透明導電模之原理及應用，(2006)。

Available:http://www.51touch.com/Files/TouchDoc/itofilm_tco_theory_app.ication.pdf

3. 黃宏欣，透明導電模，(2010)。