無電極蝕刻於矽基板製造抗反射層

多孔矽結構具有許多優質的特殊性質，廣泛應用於半導體、能源及感測器等領域，多孔矽結構發展製程技術上扮演著關鍵的角色。本研究為探討一種簡易與迅速的金屬輔助化學蝕刻技術(metal-assisted chemical etching MACE)，在無通電下製作出多孔矽的特殊性質，即可在常溫下與常壓條件下，可製作出大面積且均勻的多孔矽結構，探討以此反應所成長多孔矽結構，於不同金屬層、矽基材阻抗、蝕刻液、反應時間等參數下進行生成反應，藉由電子顯微鏡觀察多孔矽結構的表面形貌、影像的分析等性質討論，傳統製程技術在於不同的固、液、氣法與電化學蝕刻法。經實驗後發現，金屬的種類將會影響蝕刻速率，當反應的金屬薄膜厚度增加，結構將由孔洞狀逐漸轉變為獨立且均勻分布的筆直、樹枝狀結構，在此達到更簡易、迅速性及低成本優勢，矽基材表面以無電極蝕刻來達到沉積金屬層，藉由金屬粒子的變化可得到更細小及緻密孔狀結構，實際應用的可能性。

關鍵字

金屬輔助化學蝕刻；多孔矽結構

並列摘要

The Porous silicon structure has many high-quality special properties, widely used in semiconductor, energy and sensors and other fields, porous silicon structure development process technology plays a key role. This study is to explore a simple and rapid metal-assisted chemical etching technique (metal-assisted chemical etching MACE), and the special properties of porous silicon produced under no power, formerly in different solids. The liquid, gas and electrochemical etching method can be used to produce large area and homogeneous porous silicon structure under normal temperature and under normal pressure, to discuss the structure of porous silicon grown by this reaction, in different metal layers, silicon substrate impedance, etching solution. The formation reaction of thickness and reaction time is discussed, and the surface morphology and image analysis of porous silicon structure are observed by electron microscope. After experiments, the metal species will affect the etching rate, when the thickness of the metal film of the reaction increases, the structure will gradually turn into an independent and evenly distributed dendritic structure. This achieves simpler, faster and low cost advantages, the silicon substrate surface with the non-electrode technology to reach the deposition metal layer, bounded by the changes of Jin Naimi particles can be more small and dense pore-like, column and columnar structure, the practical application possibilities.