脈衝雷射沉積法合成銀鉛氧化物

本研究中主要利用脈衝雷射沉積法將Ag5Pb2O6合成一純相的薄膜，並控制其合成參數調整薄膜的結構與組成，在單晶石英基板上可合成一具有優選面取向的純相Ag5Pb2O6薄膜，且藉由調變靶材內化合物比例，成功合成出铋取代鉛以及銅取代銀的銀鉛氧化物薄膜。生成之薄膜可利用電化學方法進行電子的摻雜，並將摻雜後的薄膜進行電阻與溫度關係的量測。另可將Ag5Pb2O6薄膜結合固態電解質薄膜製成一新穎全固態薄膜電池。

關鍵字

脈衝雷射沉積法；銀鉛氧化合物；薄膜；全固態薄膜電池

並列摘要

In this research we adapted pulsed laser deposition technique for the synthesis of pure phase Ag5Pb2O6 thin film. The structure and the composition of the film was tailored using various experimental conditions. To acquire the preferred orientation, the film was grown on the Z-cut quartz substrate. Further the target composition was modulated by replacing bismuth and silver with lead and copper respectively and successfully synthesized. Electron doping was carried out using electrochemical methods and the resistivity of the film was measured against the temperature. The Ag5Pb2O6 thin film was used as cathode in the battery technology to obtain a novel solid-state thin film battery.