雙直接注入型讀取電路設計於陣列感測器之研究

The Research of Dual Direct Injection Readout Circuit Design for Array Sensor

王耀勳(Yao-Syun Wang)

指導教授 ： 孫台平

國立暨南國際大學/科技學院/電機工程學系/碩士(2013年)

https://doi.org/10.6837/NCNU.2013.00303

摘要

本論文主要設計雙波段融合式雙直接注入型讀取電路設計，並具有行交錯的雙波段讀取電路的架構。融合式雙直接注入型讀取電路單元像採用直接注入型(direct injection, DI)電路架構，並且以兩個像素電路做為一個單元，而中長波長的接受端分別有各自的行讀取及選擇電路以及輸出緩衝器，因此中波長與長波長的結果可以各別在自己的輸出呈現，藉由在焦平面陣列中提供一個額外的波段，更可方便辨識目標，因此也利用此晶片將雙輸出的結果達成雙波段影像陣列讀取晶片設計以及顯示模組整合與測試，將輸出波形轉為不同深淺灰階陣列，更可協助雙波段紅外線讀取電路驗證與影像顯示，以在未來能有更廣泛的應用。
此電路採用了TSMC 0.35um 2P4M CMOS 5V的製程，像素電路佈局面積為40umx40um，每一個像素中有兩個DI架構，並設計了16x12 陣列大小的讀出電路。模擬設定中波長電流輸入為2nA~4nA，長波長為6nA~8nA，電路的輸出擺幅為2.04V，量測電流輸入電流範圍結果為1.9pA~50 nA，積分時間可調，像素可輸出最高速率為12 MHz，系統雜訊電壓Vrms為0.68mV訊號雜訊比為69dB，而整體的功率消耗為18.01 mW。

關鍵字

雙波段紅外線感測器 ； 紅外線讀取電路 ； 影像顯示 ； 訊號雜訊比

並列摘要

This thesis has designed the combined dual direct injection readout circuit with the architecture of dual-band readout circuit in interlaced columns. The combined dual direct injection readout circuit uses the direct injection architecture which unit cell has dual pixel circuits. Receiving end of middle wavelength and long wavelength has each column select circuit and output buffer. Using focal plane arrays by an additional wavelength band can identify targets conveniently, so we use the results of this chip to achieve dual-band array image module for testing and integration. Finally, we transform waveform into gray level in different shade and it can assist dual-band IR sensors in circuit identification and video display. In the future there are a wider range of applications.
This circuit uses TSMC 0.35um 2P4M CMOS 5V manufacturing process. The pixel circuit layout area is 40umx40um. Each pixel has two DI architecture and design order size 16x12 array readout circuits. Simulation input photo current for middle wavelength is setting 2nA ~ 4nA, and long wavelength is setting 6nA ~ 8nA.The circuit's output swing is 2.04V. Input measurement current range results 1.9pA ~ 50 nA. This chip has adjustable integration time. The pixel output maximum rate is 12 MHz. The system noise voltage Vrms is 0.68mV and signal to noise ratio is 69dB.While the overall power consumption is 18.01 mW.

並列關鍵字

ROIC ； Dual-band IR sensors ； Video display ； Signal to noise ratio

參考文獻

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