雙模式讀取電路設計於陣列感測器之研究

The Research of Dual Mode Readout Circuit Design for Sensors Array

毛弘瑋(Hung-Wei Mao)

指導教授 ： 孫台平

國立暨南國際大學/科技學院/電機工程學系/碩士(2013年)

https://doi.org/10.6837/NCNU.2013.00304

摘要

本論文提出雙模式讀取電路架構，使用緩衝放大器注入型(Buffer direct injection, BDI)以及電容式轉阻放大器型(Capacitve Transimpedance Amplifier, CTIA)來組合雙模像素電路結構，利用BDI與CTIA共享同一運算放大器的設計結合開關實現選擇四種讀出模式。BDI模式藉由放大器回授降低輸出阻抗提升注入效率，適用於感應電流較高之感測器，而CTIA模式不需額外偏壓控制感測電流，適用於感應電流較低之感測器。該讀取電路採用TSMC 0.35um 2P4M 5V製程製作，單一像素布局面積為30μm×30μm，其輸入電流範圍為0.11pA ~ 164nA，其中BDI模式適用於3.3pA ~ 164nA，而CTIA模式適用於0.11pA ~ 14nA，功率消耗為9.063mW，輸出擺幅為1.5V。

本論文另提出兩種CTIA模式組合成之雙模式讀取電路架構，其像素讀取電路採用電容式共閘極電容式轉阻放大器型(inverter-based CTIA)、電容式運算電容式轉阻放大器型(OPA-based CTIA)電路架構，利用開關與外部輸入訊號，使電路操作有兩種讀取模式。此電路模擬採用了TSMC 0.35μm 2P4M 5V的製程，設定輸入電流輸入為10pA ~ 2.5nA，功率消耗為10.5mW，輸出擺幅為2.2V。

本論文設計結合各種模式的優點以能配合雙波段陣列感測器，可適用於大範圍亮度以及高對比影像讀取運用，以紅外線自動影像系統來驗證晶片做切換模式以及均勻度的分析與探討。

關鍵字

雙模切換讀取架構 ； 雙波段陣列感測器 ； 紅外線自動影像系統

並列摘要

An approach for readout of infrared sensors array is proposed, which is dual mode readout circuit. In this circuit, the pixel structure consists of coupling Buffer Direct Injection (BDI) to Capacitve Transimpedance Amplifier (CTIA). This construction is built of the symmetrical readout circuit in each pixel sharing with middle operational amplifier simultaneously with switches to realize four readout modes. The input impedance of pixel circuit in BDI mode can be reduced by amplifier feedback to enhance injection efficiency. And it applies for the higher sensed current detectors. Pixel circuit in CTIA mode does not require another bias to control input current involving in applications of the lower sensed current detectors. This readout chip is fabricated by TSMC 0.35μm 2P4M 5V, 30μm×30μm of the pixel size, and which of input current range is 3.3pA ~ 164nA. The input photocurrent range of BDI is 3.3pA ~ 164nA and CTIA is 0.11pA ~ 14nA. The output swing is 1.5V and the power consumption is 9.063mW.

Another dual mode readout circuit is proposed in this thesis. This readout circuit consists of dual CTIA-mode pixel structures which are inverter-based and OPA-based modes. This construction is also built of the symmetrical readout circuit OPA sharing technique with switches to realize two readout modes. This readout chip is simulated by TSMC 0.35um 2P4M 5V, 30μm×30μm of the pixel size, and which of input current range is 10pA ~ 2.5nA. The output swing is 2.2V and the power consumption is 10.5mW.

The designed chips link up the individual traits and merits of various modes to readout the dual-band sensors array. Wide dynamic range and high sensitivity of chips are applied to video out in auto infrared imaging system.

並列關鍵字

Dual mode readout circuit ； Dual-band sensors array ； Auto infrared imaging system

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