For the application and realization of near-field optical disk, we use a prototypical commercial optical disk driver to measure and analyze the carrier to noise ratio (CNR) of recording mark trains on ZnOx-type near-field optical disk. The CNR value of recoding mark trains of 100nm can be achieved to 33dB. In the further studies, we change the layered structure of ZnOx-type near-field optical disk and optimize the write strategy of commercial optical disk driver. By the change of different thickness of dielectric spacer (ZnS-SiO2), the interaction between the ZnOx near-field active layer and phase-change material is studied. From the experimental results, the optimized layered structure can be obtained as DVD+RW ZnS-SiO2 (130nm) ZnOx (15nm) ZnS-SiO2 (60nm) Ge2Sb2Te5 (20nm) ZnS-SiO2 (20nm) with bonding.