摻雜之二硫化硒層狀材料在作為場效應電晶體通道對降低源/汲極接觸電阻之研究

Study of Doping Layered-WSe2 Material as Field Effect Transistor Channel for Source/Drain Contact Resistance Reduction

黃紹嘉(HUANG Shao-Jia)

指導教授 ： 李敏鴻 ； 鍾朝安

國立臺灣師範大學/科技與工程學院/光電工程研究所/碩士(2016年)

https://doi.org/10.6345/NTNU202204028

摘要

近幾年，過渡金屬硫屬化合物因為具有能隙關係，比同樣具有二維結構的石墨烯更適合用在電晶體元件製作，因此吸引很研究學者的興趣。其中WSe2是屬於P型的半導體更特別引人關注，然而一直缺乏一個穩定可控制的摻雜技術，難度頗高。本篇將開發一個穩定可行的摻雜製程，利用共濺鍍製程技術加上後硒化處理。希望用這個方法能夠讓電晶體的載子濃度及載子遷移率提升，讓通道電阻及接觸電阻有效的降低。

關鍵字

二硫化硒 ； 二硒化鎢 ； 二硫化鉬 ； 接觸電阻 ； 硒化

並列摘要

Recently, two dimensional transition metal dichalcogenides (TMDs) compounds have drawn much interest due to their potential in TFT channel application than Graphene which without bandgap. Among these 2D materials, p-type WSe2 is particularly attractive. However, precise doping of WSe2 is difficult due to the absence of a controllable doping technique. In this paper, a controllable WSe2 doping method by co-sputtering process followed by post selenization treatment is demonstrated. Using this technique, high acceptor doping concentration and good hole mobility were obtained. Low sheet resistance and contact resistance were obtained.

並列關鍵字

MoS2 ； WS2 ； WSe2 ； Contact Resistance ； Selenization

參考文獻

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