南科鄰近線路事故之電壓驟降研究

Voltage Sag Due to Nearby Line Faults in Tainan Science-Based Park

張德福(De-Fu Chang)

指導教授 ： 王瑋民

崑山科技大學/工程學院/電機工程研究所/碩士(2005年)

https://doi.org/10.6828/KSU.2005.00020

摘要

電力系統遭受雷擊、鹽害等天然災害或外物碰觸、設備劣化及人為因素時，均有可能引起輸配電設備或線路故障，此故障所引發之瞬間停電或電壓驟降對用戶設備端的影響很大，對高科技產業傷害更嚴重。
台南科學園區為國內重要之高科技及高產值園區，電力供應之品質及穩定度直接影響園區之產能。本論文首先概述台南科學園區345kV地下電纜和洞道系統的冷卻方式，再探討南科超高壓變電所輸電系統及鄰近線路之架構，同時分析近年來因線路事故造成之電壓驟降情形，藉由ASPEN-Oneliner套裝軟體，模擬所需資料係利用建立系統線路圖，在模擬過程中，隨時可圖形顯示結果，分析某一輸電線事故時，而對台南科學園區電壓驟降幅度，再與實測值作為比較，以提供南科供電系統的調度上、更加靈活及減少園區電壓驟降。
最後探討南科超高壓變電所161kV採分隔東、西匯流排供電及分歧接入備用161kV環路供電架構對電壓驟降之影響。

關鍵字

台南科學園區 ； 電壓驟降

並列摘要

When an electrical system experienced lightning strokes, salt pollutions, climate disaster, equipment inferior or personal factor…etc., faults in the transmission distribution equipments or lines will possibly happen. The faults caused leads to the power failure and voltage sag. This had a great influence on the end-user equipment, especially in high tech industry.
Tainan Science-Based Park is an important district of high tech industry. The quality and stability of electricity supplied will affect the performances. This thesis starts with the description of the cooling method of 345 KV underground cables and tunnel system. Then, the Taiwan Power Company (TPC) transmission distribution system of Tainan Science-Based Park and the neighbor line framework are investigated. Meanwhile, the historical records of voltage sag resulting from the line faults in recent years are also analyzed. The ASPEN-Oneliner software is employed for voltage sag simulations of the line faults near Tainan Science–Based Park. By the simulation results and actual recorded data, the information of flexibility in electrical power dispatch is obtained and effects on voltage sag improvement for Tainan Science-Based Park are verified.
Finally, the effects on voltage sag by adopting two separated 161 kV power buses (East and West) and a backup lateral transmission line in Tainan Science-Based Park E/S are investigated.

並列關鍵字

Tainan Science-Based Park ； Voltage Sag

參考文獻

[11] SEMI F47-0200, “specification for semiconductor processing equipment voltage sag immunity” SEMI 2000.

[12] SEMI F47-0999, Provisional specification for semiconductor processing equipment voltage sag immunity, SEMI, September 1999.

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[2] 廖清榮等， “高科技科學園區電力品質監測系統之建立，” 台電綜合研究所，2003年。

[3] 黃清池、黃叔林，“縮小161kV級交連PE地下電纜完成外徑之研究，” 中華民國第二十三屆電力工程研討會，2002年。