透明導電膜ITO以氫氣氮氣熱處理對光電性質之研究

Study of electric and optical properties of transparent conducting thin films ITO by hydrogen and nitrogen heat treatment

毛胤祺(In-Chi Mau)

指導教授 ： 張慎周

崑山科技大學/工程學院/機械工程研究所/碩士(2004年)

摘要

本篇是研究氧化銦錫薄膜ITO在不同氫氣流量下熱處理的光學與電學性質。ITO薄膜是在氫氣或氫氣氮氣混合熱處理。熱處理的腔體，在熱處理之前抽真空至背景壓力2.5E-5 torr。在500℃氫氣氮氣混合熱處理，電阻率降低。退火於500℃注入氫氣6 sccm氮氣6 sccm時進入腔體，可獲得最低的電阻值。ITO薄膜電阻率的降低可能是由於氫氣導致氧空缺施體，使其提供電荷載子於導帶。ITO薄膜於500℃時通入氫氣6sccm氮氣6sccm進入腔體熱處理後，在可見光的波長400~800 nm可獲得光穿透率85﹪以上。ITO薄膜穿透率高可能是因為氫氣所導致的氧空缺增加了載子濃度，導電帶的最低階層被過量電荷載子所填滿，即Moss-Burstein效應。在退火時增加氫氣的流量，X-Ray繞射於氧化銦錫(222)面的強度會增加。在500℃氫氣氮氣混合下熱處理，可獲得於600×600 nm範圍的均方根表面粗糙度值為3.861 nm。

關鍵字

熱處理 ； 氧化銦錫

並列摘要

The effect of heat treatment in various hydrogen flows on the electrical and optical properties of indium tin oxide (ITO) films has been investigated. The ITO films were heat treatment in hydrogen or mixd hydrogen and nitrogen .The chamber of heat treatment was evacuated to a background pressure 2.5×E-5 torr before annealing. Annealing decreased the resistivity up to heat treatment of 500℃ mix hydrogen with nitrogen. The lowest resistivity attain was 29.32E-4 W·cm , annealing at 500℃ were introduce hydrogen and nitrogen gases into chamber with 6sccm and 6sccm flows. The cause of decreased resistivity of indium tin oxide films were hydrogen result in oxygen vacancy donors prvide the charge carriers for conduction. The ITO films with transparency above 85﹪within the visible wavelengths 400~800 nm, was obtained after heat treatment at 500℃ introduce hydrogen and nitrogen gases into chamber with 6sccm and 6sccm flows. The ITO films high transparency were due to hydrogen results in oxygen vacancy increased carrier concentration, that the lowest states in the conduction band are filled by excess charge carriers as the Moss-Burstein effect. The X-ray diffraction intensity of the (222) plane of indium tin oxide increased, and annealing with increase hydrogen gases flows. ITO films with a root mean square roughness of 3.861 nm over an area of 600×600 nm were obtained at the mixed hydrogen and nitrogen with 500℃ annealing.

並列關鍵字

heat treatment ； ITO

參考文獻

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