在GaN/Sapphire上成長Arsenic-doped GaN薄膜的研究

Investigation of Arsenic-doped GaN thin Film on GaN/Sapphire Substrates

黃崑賓(Kun-Bin Huang)

指導教授 ： 李道聖

崑山科技大學/工程學院/電機工程研究所/碩士(2003年)

https://doi.org/10.6828/KSU.2003.00010

摘要

本論文就以針對氮化鎵摻砷進行長波長波段的研究，首先吾人介紹氮化鎵的發展背景與有機金屬氣相沉積磊晶法(MOCVD)及PL量測技，接著吾人在Sapphire上己成長GaN的基板上再使用不同成長條件成長一層GaN，之後，成功的在基板上成長一層GaN後再摻入少量的Arsenic(As)以控制不同的晶格常數以致能控制不同的波長，在成功的成長出Arsenic-doped的GaN後，再進行XRD以及PL的量測。

關鍵字

氮化鎵摻砷

並列摘要

GaNAs epilayers were grown on GaN/Sapphire substrates by low-pressure metal-organic chemical vapor deposition .Tertiarybutylarsine (TBAs) was used as the As source . first，Introduction the background of development and MOCVD and the measurement of technique for XRD、PL、AFM， To following，Using the different of grow conditions on GaN/Sapphire substrates .
After，Doping a few Arsenic(As) to control the lattice constant with the result that control the different wavelength，Successed to grow of Arsenic-doped GaN，proceed to measurement of the XRD、PL、AFM .

並列關鍵字

MOCVD ； GaNAs

參考文獻

[1] S. Nakamura, “The Blue Laser Diode”, Springer, New York,1997.

[5] Hyunseok Na, Hyun Jim, Euijoon Yoon, Cheolsoo Sone, Yongjo Park,”Arsenic incorporation and growth mode of GaNAs grown by low-pressure metal-organic chemical vapor deposition”, JOURNAL OF CRYSTAL GROWTH 248(2003) 437 – 440.

[6] S. V. Novikov, A. J. Winser, I. Harrison, C. S. Davis and C. T. Foxon,”A study of the mechanisms responsible for blue emission from arsenic-doped gallium nitride”, Semicond. Sci. Technol. 16(2001)103 – 106.

[9] S. Nakamura, Jap. J. Appl. Phys. 30, L1705 (1991).

[10] E. H. C. Parker, The technology, Physics of Molecular Beam Epitaxy, Pleunm, New York (1985).