以DC磁控濺鍍沈積氧化銻錫薄膜光電性質之研究

An investigation of optical and electrical properties of ATO thin films deposited by DC reactive magnetron sputtering

呂飛龍(Fei-Lung Lu)

指導教授 ： 劉見成

崑山科技大學/工程學院/機械工程研究所/碩士(2006年)

https://doi.org/10.6828/KSU.2006.00051

摘要

透明導電氧化物薄膜在可見光範圍具有高穿透率、在紅外光範圍有高的反射性及具有高導電性。本研究以直流反應磁控濺鍍法 (DC reactive magnetron sputtering) 沈積氧化銻錫薄膜於康寧玻璃(EAGLE2000™) 基材上，探討不同氧流量及基板溫度等製程對氧化銻錫薄膜的微結構及光電性質之影響，並以不同退火溫度及在氧氣氛下對氧化銻錫薄膜作後續退火處理，薄膜膜厚以表面形貌儀 (XP-2)量測、SEM 分析表面微結構及 X-ray 分析結晶性，並以 UV 光譜儀及四點探針量測氧化銻錫薄膜之光電性質。
結果顯示，氧化銻錫薄膜結晶性會隨著基板溫度提昇而增加，薄膜主要以(110)、(211)及(101)等平面成長。經退火後，薄膜繞射峰明顯提昇，主要繞射峰在 (110) 強度最強，其優選方向仍為SnO2 rutile (金紅石)結構，而氧化銻錫薄膜在氧氣氛中退火沒有第二相產生，其電阻率隨著基板溫度上升而大幅下降，且退火後電阻率有明顯的改善，當退火溫度在500℃時，電阻率為2.37×10-3Ω-cm最低。

關鍵字

氧化銻錫 ； 直流反應磁控濺鍍 ； 電阻率

並列摘要

Transparent conducting oxide (TCO) coatings combine the property of a high optical transmission in the visible spectral region with that of a high electrical conductivity, and a high reflectance in the infrared (IR) region. In this study, ATO films were deposited on Corning glass (EAGLE2000TM) by DC reactive magnetron sputtering from metallic targets at different substrate temperature (250-400℃) in different oxygen flow rates. The effects of different annealing temperature and atmosphere on the composition, microstructure, surface morphology, conductivity and optical properties of ATO films were investigated. The film thickness was measured by a stylus profiler (XP-2). Crystallinity of the films was analyzed by X-ray diffraction (XRD) measurements with Cu K?radiation and the morphology of the surface was examined using a scanning electron microscope. The transmittance spectra were recorded using a UV-Visible recording spectrophotometer in the wavelength range from 300 to 800 nm. Electrical properties of the films were measured by a sample DC four-point probe technique.
When different substrate temperatures, below 300℃, no XRD peak was observed, and this result suggested that the deposited films were nearly amorphous. However, the increase of deposition temperature above 350℃ caused the crystallization of the films, as represented by basically polycrystalline, a tetragonal rutile structure of SnO2 with highly (110) preferred orientation. Other peaks snch as (211),(101),(310) were also observed at relatively low intensity. The resistivity decrease when the substrate temperature increase. Results also showed that after annealing at 500℃ in oxygen, a minimum resistivity of 2.37×10-3 Ω-cm was obtained.

並列關鍵字

DC reactive magnetron sputtering ； Antimony-doped tin oxide ； resistivity

參考文獻

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