利用BiCMOS製程與負微分電阻電路設計邏輯電路和除頻器

Design of Logic Circuit and Frequency Divider Using Negative differential Resistance Circuit by BiCMOS Process

李昱寬(Yu-kuang Li)

指導教授 ： 甘廣宙

崑山科技大學/工程學院/電子工程研究所/碩士(2009年)

摘要

此篇論文是以N型MOS-HBT-NDR電路來設計新型邏輯閘電路，利用單穩態-雙穩態傳輸邏輯閘(monostable-bistable transition logic element，MOBILE)電路的操作原理來實現，並以 NMOS元件來控制輸入級電路中NDR電路的開關動作，進而調變整體電路的I-V特性曲線。所提出的電路架構和傳統邏輯閘電路做比較，可以減少電路複雜度與元件數等優點，並可配合Si-based的CMOS製程與SiGe-based的BiCMOS製程，將所設計的電路，以積體電路的方式來實現。而我們由NDR的I-V curve曲線可以觀察到，NDR元件具有非常特別的非線性現象，而通常一個非線性元件所組成的電路通常會有混沌現象，因此我們提出六種不同架構的新型除頻器，並且探討其中的混沌現象，而利用混沌現象中的週期倍增所實現除頻效果。

關鍵字

負微分電阻元件 ； 邏輯閘電路 ； 除頻器電路 ； MOS-HBT-NDR元件之參數調變

並列摘要

This paper is based on N-type MOS-HBT-NDR circuit to design a new type of logic gate circuits, The use of a monostable-bistable transition logic element (MOBILE) logic gates to realize the principle of operation, ,and NMOS devices to control the input stage circuit NDR circuit switching action, And the overall modulation circuits I-V characteristic curve. And with Si-based system of CMOS and SiGe-based way of the BiCMOS process, the circuit will be designed, to the way integrated circuits to achieve. And we by the NDR curve of the IV curve can be observed, NDR device has a very special non-linear phenomenon, Usually composed of a non-linear circuit components are usually chaotic phenomenon, so we raise our six different structure in addition to the new frequency, and to explore the phenomenon of chaos, and the use of the cycle of chaotic phenomena in addition to the frequency multiplier effect achieved .

並列關鍵字

Negative differential resistance ； Logic gate circuit ； frequency Divider circuit ； MOS-HBT-NDR modulation of parameters of components

參考文獻

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[5] Niu Jin et al., “Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR”, IEEE Electron Device Letters, Vol. 25, Issue 9, Sep. 2004