射頻磁控濺鍍法成長氧化鋅摻雜鈦鋁透明導電膜之性質研究

The Characteristics of transparent conducting ZnO films doped with titanium aluminum by RF magnetron sputtering

謝易晉(Yi-Jin Shie)

指導教授 ： 林天財

共同指導教授 ： 張品全

崑山科技大學/工程學院/電機工程研究所/碩士(2011年)

摘要

氧化鋅薄膜有顯著C軸優選方向，但其電阻值很高，要進一步提高氧化鋅薄膜的導電性，除了材料本身氧空缺及鋅間隙原子提供電子外，也藉由不同摻雜物的取代來獲得額外的電子。
在本實驗中，摻雜金屬元素之氧化鋅薄膜將以射頻磁控濺鍍法合成，利用RF射頻濺鍍法進行氧化鋅及鈦鋁靶共濺鍍，成長氧化鋅摻雜鈦鋁於玻璃基板上。研究中改變濺鍍功率和沉積時間，再將薄膜進行熱處理，利用不同的退火溫度，期許能更進一步改善薄膜的導電率及透光率。結果發現所有ZnO：AlTi薄膜，皆出現ZnO(002) 繞射峰，在實驗量測後得到，改變鈦鋁功率的氧化鋅摻鈦薄膜70W時，可得電阻率為0.8Ω-㎝，平均光穿透率92%；改變製程時間的氧化鋅摻鈦鋁薄膜，在沉積時間是20min，其電阻率為10.6×102Ω-㎝，平均光穿透率91%。
在退火後的ZnO:AlTi 薄膜的ZnO(002)繞射峰沒有太大變化，但其他繞射峰有明顯的變強，這現象推測是薄膜受到熱能，晶格中的缺陷受到修補，使薄膜的結晶性變好，所以其他晶面的繞射強度會明顯增加，本實驗在未退火下可得最低電阻率2.83×103Ω-cm，平均光穿透率為91%。

關鍵字

氧化鋅 ； 鈦鋁 ； 透明導電膜

並列摘要

Zinc oxide films generally have high c-axis preferred orientations, but the film resistivity is very high for undoped materials. Excluding the mechanisms of oxide vacancies and zinc interstitial atoms, extra atoms are added into zinc oxide to increase electron concentration as well as improving electrical properties.
In this study, zinc oxide doped with metals of titanium and aluminum on glass substrate synthesized by radio frequency magnetron sputtering was developed by two cathodes co-deposition of zinc oxide and titanium aluminum alloy target. The sputtering powers, deposition time were changed to modify a better film property, then, annealing was carried out to improve the conduction and transmittance. Experimental results showed all ZnO:AlTi films were found (002) diffraction peaks. For the change of AlTi target powers, the resistivity of 0.8Ω-cm and average transmittance of 92% were developed at the AlTi power of 70 watt. The resistivity of 10.6×102Ω-㎝ and average transmittance of 91% were developed on the deposition time at 20min.

For the annealed ZnO: AlTi film, the position of ZnO (002) diffraction peak did not change too much, however, the peak intensity of other planes are found when the sample is annealed. This phenomenon indicates the film is heated and the lattice defects are repaired then the crystalline of film is changed to be better. In the study, the lowest resistivity of 2.83 × 103Ω-cm, and average transmittance of 91% are obtained at the sample without annealing.

並列關鍵字

ZnO ； titanium aluminum ； transparent conducting films

參考文獻

[2]L.Davis etc.al, “Proper ties of Transparent Conducting Oxide Deposited at Room Temperature” Thin Solid Films 236(1993) 1-5.

[3]E. Elangovan etc.al, “Preliminary studies on molybdenum-doped indium oxide thin films deposited by radio-frequency magnetron sputtering at room temperature”, Thin Solid Films 515 (2007) 5512–5518.

[4]K. Tominaga etc.al, “Properties of films of multilayered ZnO:Al and ZnO deposited by an alternating sputtering method” Thin Solid Films, 343-34-l (1999) 160-163.

[5]R. G. Gorden etc.al, “Textured aluminum-doped zinc oxide thin films from atmosphere pressure chemical-vapor deposition”, Journal of Applied Physics, 71 (2) (1992) 880-890.

[6]Y. I. et.al “ The Effects of Zinc Diffusion on The Electrical and Optical Properties of ZnO : Al Films Prepared by RF Reactive Sputtering ”, Thin Solid Films, 199(1991) 223-230.