以金屬靶反應性磁控共濺鍍製備氧化銦鋅透明導電薄膜之研究

Preparation and Properties of the Indium Zinc Oxide by Reactive Magnetron Co-sputtering using Indium and Zinc Metallic Targets

陳慧津(Hui-chin Chen)

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2007年)

摘要

本研究以反應性磁控共濺鍍系統利用銦靶及鋅靶在康寧Eagle2000玻璃基板上製備高導電度及高穿透率的氧化銦鋅(IZO)透明導電薄膜，期能取代傳統陶瓷靶材濺鍍透明導電膜之技術，以降低靶材的成本與增進大面積製備薄膜之可行性。藉由改變氧氣分壓及基板溫度製備不同鋅原子比例(Zn/(Zn+In) at.%)之氧化銦鋅透明薄膜，並在還原氣體(95% Ar + 5% H2)及真空下進行熱處理，觀察薄膜結晶性及導電特性變化。結果由EDS分析可知，改變不同氧氣分壓會造成不同鋅原子比例(Zn/(Zn+In) at.%)的氧化銦鋅薄膜。XRD實驗結果顯示，於基板未加熱下製備之薄膜結構為非晶質，當基板加熱時製備之薄膜呈現In2O3結晶結構，且結晶結構隨基板加熱溫度增加而提升薄膜的結晶性，而Zn摻雜量增加對薄膜結晶的熱穩定性提升。氧化銦鋅薄膜初鍍膜在可見光範圍內均可達到80%以上的穿透率，當薄膜在真空中熱處理對於薄膜穿透率變化不大，而在還原氣體中當熱處理溫度過高氧氣被大量還原會有微量In析出，導致穿透率明顯下降。熱處理製程能有效的降低IZO薄膜的電阻值，最佳製程參數為基板未加熱通入O2流量為10 sccm所製備的IZO薄膜，經RTA在真空中以600oC 熱處理5分鐘後之薄膜，其結晶結構仍為非晶質結構，可得最低電阻率6.1×10-4 Ωcm，穿透率達81.7%和平坦的表面形貌(Rms = 1.19 nm)。

並列摘要

Transparent conducting Indium Zinc Oxide (IZO) films were prepared on a cleaned Corning Eagle2000 glass substrate by a reactive magnetron co-sputtering. The IZO thin films are frequently deposited from ceramic targets, however, a cost reduction is expected if it is possible to use much less expensive metallic targets. Therefore, this study aims at preparing IZO thin films by carefully adjusting atomic ratios (Zn/(Zn+In) at.%) using Indium and Zinc metallic targets at various partial pressures and substrate temperatures. Electrical properties and optical properties of studied films, that were annealed in 95% Ar + 5% H2 and vacuum, were investigated. The IZO film deposited at room temperatures was amorphous, and that deposited above 150oC was polycrystalline. The studied IZO thin film had a high transmittance above 80% in the visible light wavelength. Experimental results also indicated that post-annealed IZO thin film at 600oC in vacuum had an amorphous structure, a low resistivity of 6.1×10-4 Ωcm, a high transmittance of 81.7% and a smooth surface roughness (Rms = 1.19 nm) when the film was deposited in 10 sccm oxygen flow rate on an unheated substrate.

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