膜厚與退火時間對在玻璃上的鋁誘發矽薄膜結晶性與電性影響分析

Effects of Film Thickness and Annealing Time on the Crystallinity and Electrical Properties of Aluminum Induced Silicon Film Crystallization on Glass Substrate

江孟益(Meng-Yi Chiang)

指導教授 ： 朱孝業

崑山科技大學/工程學院/機械工程研究所/碩士(2010年)

摘要

本研究以鋁金屬誘發非晶矽結晶之方法，研究不同膜厚度與退火時間對鋁誘發非晶矽結晶的影響，本研究以濺鍍法分別沉積對矽不同鋁矽厚度的鋁層，接著以電漿輔助化學氣相沉積200、300、400、500 nm的非晶矽層，再以退火溫度450°C下進行持溫時間10分鐘、15分鐘、30分鐘與6小時的退火處理，並於鋁蝕刻過後以光學顯微鏡、電子顯微鏡、X-Ray繞射分析儀、拉曼光譜儀、霍爾量測及直流交流量測系統進行結晶性與電特性的分析。
　　研究結果得知，不論任何鋁矽厚度比例於10分鐘、15分鐘、30分鐘與6小時退火過程中皆可有非晶矽膜誘發結晶之跡象，其中以非晶矽膜厚度為400 nm之條件下誘發的電性最好，但非晶矽薄膜和鋁薄膜的比例厚度為1:1的試片會形成破裂狀的多晶矽薄膜無法完整連接起來導致電特性不佳。而當非晶矽薄膜厚度增加到500 nm則此破裂情形減少，但是薄膜表面還是有裂紋存在，對電性是影響相當大的缺陷之一。如將此試片中的鋁薄膜對非晶矽薄膜的比例厚度降低後，雖然結晶性對於相同比例1:1厚度比的鋁薄膜和非晶矽薄膜的試片較差，但是由於矽薄膜微觀形貌較為連續對於電性方面是有較佳的表現。

關鍵字

非晶矽 ； 鋁誘發 ； 多晶矽

並列摘要

This paper studies the effects of film thickness and annealing time period on the crystallization quality and electrical properties of aluminum induced silicon film crystallization method on the glass substrate. The thin film structure of a-Si/Al oxide/Al/glass were fabricated with different a-Si film thickness of 200, 300, 400, and 500 nm, and different Al/a-Si film thickness ratios of 1:1, 1:1.5, and 1:1.8, respectively. The annealing process were conducted with time period of 10, 15, 30 minutes, and 6 hours, respectively, under 450°C of annealing temperature.
Results shows that the crystallized silicon were all successfully induced with any annealing time period listed above. The poly-Si film were not continuously connected with Al/a-Si film thickness ratio of 1:1 if the a-Si film thickness is less than 400 nm through the observation of OM, SEM, and EDS analyses. The mobility reaches a maximum value of 31.4 cm2/V-s with a-Si film thickness of 400 nm and Al/a-Si film thickness ratios of 1:1.5 under 450°C annealing for 30 minutes.

並列關鍵字

Amorphous ； Aluminum Induced ； Poly silicon

參考文獻

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