- 學位論文
(1-x)TiO2-xSrTiO3陶瓷材料位於X-Band之微波介電特性分析
X-Band Microwave Dielectric Properties Measurements of (1-x)TiO2-xSrTiO3 Ceramic Material
摘要
本論文介紹(1-x)TiO2-xSrTiO3材料之微波介電特性。主要分為塊體樣品與薄膜樣品兩部分，塊體部分是探討在不同摻雜比例下塊體之微波介電特性；薄膜部分是探討在不同氧氣比例之濺鍍條件下薄膜之微波介電特性。 塊體樣品之製作是以固態反應法製作(1-x)TiO2-xSrTiO3(x=0~ 0.1)陶瓷。在摻雜不同比例下，固定煆燒溫度(1200oC)，改變燒結溫度1300oC和1350oC。樣品使用網路分析儀以柱狀共振技術量測塊體之微波介電特性。量測顯示摻雜x=0.1，燒結溫度為1350 oC時，有最佳之介電常數與介電損耗。其介電常數與介電損耗分別為109與1.13x10-4。隨著SrTiO3之摻雜比例越大介電常數也越高。X光繞射儀量測結果顯示，隨著SrTiO3的摻雜量增加，繞射峰強度也逐漸增加。 薄膜樣品之製作是以反應性射頻磁控濺鍍製備(1-x)TiO2-xSrTiO3 (x=0.1)薄膜，在最佳之摻雜比例下，以固定的濺鍍功率、濺鍍壓力、濺鍍時間與基板加熱300oC製備薄膜樣品，量測之方法則以網路分析儀利用共振腔擾動技術。以探討不同氧氣比例時薄膜之介電特性。
並列摘要
In the thesis, we investigate the microwave dielectric characteristics of (1-x)TiO2-xSrTiO3 with the forms of bulk and film samples. For bulk samples, dielectric properties of various doping concentration were studied. The formulation of the bulk samples of (1-x)TiO2-xSrTiO3(x=0~0.1) is made by the solid reaction method, With different doping rates and the fixed calcined temperature(1200oC), the sintering temperature are varied (1300oC and 1350oC) The post resonance technique was adopted to measure the microwave dielectric characteristic of the bulk sample by a network analyzer. For doping value x=0.1 and the sintering temperature 1350 oC, it is the best dielectric constant and dielectric loss, which is 109 and 1.13x10-4. The dielectric constant is increased by increasing doping rate. The result of X-ray diffraction has shown that, with the increasing amount of SrTiO3 , the diffraction intensity would be increased. The thin film formulation of (1-x)TiO2-xSrTiO3(x=0.1) adopted the reactive radio magnetic controlled sputtering method, Under the suitable most proper doping rate, the fixed plating power, pressure, and time were and fixed the substrate was heated to 300 oC. The dielectric characteristic of thin films were measured by the cavity perturbation methed by a network analyzer for samples grown at the different ratios of oxygen.