- 學位論文
塊體與薄膜材料微波介電性質量測技術之比較
Measurement technologies were compared of microwave dielectric properties for the bulk material and the thin film material
摘要
本論文係探討塊體與薄膜材料微波介電性質量測技術之差異，塊體之量測技術為柱狀共振法，薄膜之量測技術為共振腔擾動法，並將塊體與薄膜之量測技術做比較。 塊體樣品是由陶瓷粉末和聚乙稀粉末混合所製成之複合材料，陶瓷材料分別採用MgO、MgTiO3和BaTi4O9，介電常數分別為10、17和38，聚乙稀粉末為基質材料，介電常數為2.32，而Q×f~50000(1GHz)。對此複合樣品之微波介電性質進行量測。由粉末混合方程式，可從不同體積百分比之複合材料的介電常數得到純陶瓷材料的介電常數，本論文研究之混合方程式總共有13個，包括8個指數與對數混合定律和5個其它經驗方程式，不同方程式之準確性將予以探討。柱狀共振技術將應用於塊體量測，此方法的優點是對於量測介電常數有良好的準確性，缺點為量測介電損耗準確度較低。 薄膜是使用射頻磁控濺鍍法沉積在玻璃基板上，材料為0.95TiO2-0.05SrTiO3與0.95TiO2-0.05CaTiO3，藉由不同射頻功率沉積出不同厚度的薄膜，並分析其介電性質。矩形共振腔擾動技術應用於薄膜介電性質量測，此方法的優點也是對於量測介電常數有良好的準確性，量測介電損耗之準確度則比柱狀共振法更糟，主要是因為薄膜體積非常小。 本論文主要將塊體與薄膜材料微波介電性質之量測技術做比較，並且也分析兩個技術的量測步驟和所需之樣品大小與形狀等特性。最後，建議出適合的量測方法。
並列摘要
This article discusses the difference between measurement technologies of microwave dielectric properties for the bulk materials and the thin film materials. The measurement technology for the bulk is the post resonance method. The measurement technology for the thin film is the cavity perturbation method. Those two methods are compared. The composite bulk materials were made by mixing of ceramic powders and polyethylene polymer powder. The adopted ceramic materials are MgO, MgTiO3 and BaTi4O9 of with dielectric constants 10, 17 and 38, respectively. The polyethylene polymer powder with dielectric constant 2.32 and Q×f~50000 (1GHz) is serving as the matrix material. The dielectric properties of the composite samples were measured. The dielectric constants of pure ceramics were derived from the dielectric constants of composite materials with various volume compositions. This derivation is based on the powder mixture equations. A total thirteen mixture equations are studied, including eight well known exponential and logarithmic mixture rules and five other empirical equations. The accuracies of various equations are also studied. The post resonance technology applies for bulk measurements. The advantage of this method is the good accuracy of dielectric constant measurements, but the defect is the lower accuracy of dielectric loss measurements. Thin films were deposited on glass substrates by the RF reactive magnetron sputtering method. The materials are 0.95TiO2-0.05SrTiO3 and 0.95TiO2-0.05CaTiO3. Thin films of different thickness were deposited by different RF powers to analyzed dielectric properties. The rectangular cavity perturbation technology applies for thin film measurements. The advantage of this method is also the good accuracy of dielectric constant measurements. The accuracy of dielectric loss measurement is even worse than that of the post resonance method, mainly because of the very small volume of thin films. The accuracies of microwave dielectric properties for bulk and thin film materials are compared. The measurement procedures and the required sample dimensions and shapes are also analyzed for those two techniques. Finally, suggestions of choosing adequate samples and measurement method will be given.