- 學位論文
(1-x)TiO2-xCaTiO3陶瓷材料之微波介電特性分析
Microwave Dielectric Properties Measurements of (1-x)TiO2-xCaTiO3 Ceramic Material
摘要
在此篇論文中主要介紹三大部分，第一部份探討在不同的摻雜比例與氣體比例下(1-x)TiO2-xCaTiO3薄膜之微波介電特性；第二部份係以相同材料下，探討其在不同摻雜比例下塊體之微波介電特性；第三部份將介紹應用不同長度片狀樣品於微波共振腔擾動技術之介電性質量測。 薄膜之製作是以反應性射頻磁控技術濺鍍(1-x)TiO2-xCaTiO3 (x＝0.05~0.1)薄膜。首先探討利用微波共振腔擾動技術量測其在濺鍍功率、濺鍍壓力、濺鍍時間以及腔體通入氣體都固定下，改變(1-x)TiO2-xCaTiO3薄膜在不同x摻雜量下之介電特性。再藉由最佳的摻雜量之情況下，探討不同反應氣體流量對薄膜介電特性之影響。由量測的結果可得知，在x＝0.1時有最佳的摻雜量，並在通入氣體比例Ar:O2＝50:50(%)時，有最佳之介電特性。 塊體之製作是以固態反應法製備(1-x)TiO2-xCaTiO3(x≦0.1)陶瓷。在固定煆燒溫度為1200℃下，改變其燒結溫度1300到1350℃。並利用微波柱狀共振技術以網路分析儀(VNA)來量測塊體之微波介電常數與介電損耗。X光繞射儀(XRD)分析結果顯示，隨著CaTiO3的摻雜量提高，其繞射峰強度也逐漸增加，並於摻雜 x＝0.1 燒結1350℃時有最高之峰值。而陶瓷密度隨著CaTiO3的摻雜量增加有先減少後增加之趨勢，且於摻雜 x＝0.01燒結1300℃時有最低之密度。實驗樣品並使用場發射掃描式電子顯微鏡(FE-SEM)來對材料進行分析。經觀察後發現，在不同的摻雜比例下燒結，由柱狀共振技術所計算出之結果，其介電常數會隨著摻雜比例的逐漸增加而先下降後上升。 第三部份是使用四種不同材質之樣品，研究利用微波共振腔擾動技術來量測在不同模態與樣品長度下對介電常數與介電損耗量測結果之影響。隨著樣品的長度提高，可以發現其量測之介電常數也隨之降低，而損耗正切並沒有隨著長度的增加而有太大的改變。最後並使用長度為1.5cm之glass樣品濺鍍(1-x)TiO2-xCaTiO3(x＝0.1)薄膜來做量測，可以發現其介電常數與介電損耗都跟量測不同長度樣品時有著相同的變化產生。
並列摘要
There are three main subjects in this thesis. First, the microwave dielectric properties of (1-x)TiO2-xCaTiO3 thin films at different doping amount and deposition gas composition were explored. Second, the microwave dielectric properties of the bulk at different doping amount were explored by the same materials. Finally, it studies samples with dimensions measured by the extended cavity perturbation technique. The thin films (1-x)TiO2-xCaTiO3(x＝0.05∼0.1) were deposited by the RF reactive magnetron sputtering method. First, the microwave dielectric properties of thin films at different doping amount were explored by the extended cavity perturbation technique with the fixed sputtering power, sputtering pressure, deposition time, and deposition gas. The best doping condition was then adopted to study the effect of the thin films dielectric properties at different gas percentages. From the measurement results, it was found that the best doping amount happened at x = 0.1, and a high dielectric constant was observed on the films obtained under 50% O2 partial pressure. The microwave ceramic materials (1-x)TiO2-xCaTiO3 (x≦0.1) were made by mixing of TiO2 powder and CaTiO3 powder.The manufacture method adopted a solid state reaction in a fixed calcined at 1200℃ and the sintered temperature changed from 1250℃ to 1350℃. The microwave measurement dielectric properties of the bulk were measured by the post resonance method. X-ray diffraction analysis of the results shows the diffraction peak intensity gradually increased by increasing the amount of CaTiO3 of doping percentage. The highest peak happened to x＝0.1. By increasing the doping of CaTiO3, ceramic density first decreased and then increased, and the lowest density is at x＝0.01. Experimental samples were futher analyzed by cold field emission scanning electron microscope (FE-SEM). The observation found that, by sintering in a different doping ratio and from the calculated results by the post resonance method, dielectric constants decreased and then increased with the gradually increasing of the proportion of the doping. For third part, the dielectric constant and dielectric loss in the different mode and sample lengths were measured by the extended cavity perturbation technique with four different materials. The dielectric constant decreased with increasing the sample length, and the variation of dielectric loss was not obvious. Finally, (1-x)TiO2-xCaTiO3 (x = 0.1) thin films deposited on the 1.5cm length glass sample was measured. The similar variation on the dielectric properties was observed for different sample lengths.