(1-x)TiO2-xSrTiO3陶瓷材料之微波介電特性分析

Microwave Dielectric Properties Measurements of (1-x)TiO2-xSrTiO3 Ceramic Material

楊禮瑛(Li-Ying Yang)

指導教授 ： 沈自

國立虎尾科技大學/電機資訊學院/電子工程系碩士班/碩士(2015年)

摘要

本研究係製備 (1-x)TiO2-xSrTiO3之陶瓷材料與薄膜，探討其微結構、微波介電性質分析。
樣品製備包含塊體及薄膜兩部分。以固態反應法合成(1-x)TiO2-xSrTiO3 (x=0~0.1)之塊體材料，用於量測其微波介電陶瓷特性。藉由改變燒結溫度1300℃到1350℃，並使用網路分析儀以微波柱狀共振技術來量測塊體之微波介電特性，結果顯示陶瓷體摻雜 x=0.1 在1350℃燒結2小時，具有最佳之密度。其介電常數會隨著摻雜比例增加有逐漸增加之趨勢。在 x=0.1 燒結1350℃時並有最佳量測之數值，其介電常數與介電損耗分別為 128與8.7282〖×10〗^(-4)。
薄膜樣品製備則以反應性射頻磁控濺鍍技術(1-x)TiO2-xSrTiO3 (x＝0.05)沉積在玻璃基板上。在固定濺鍍功率、濺鍍壓力、及濺鍍時間、摻雜比例之下，第一部分藉由改變不同的氧氣比例製備樣品，量測薄膜的介電性質。第二部分除以相同摻雜比例與相同氣體比例外，並將進行基板加熱至300℃。薄膜樣品乃使用共振腔擾動技術來量測薄膜樣品其介電常數與介電損耗。量測結果得知，基板加熱會使薄膜品質變好，並在氧氣比例100%時，有最佳之介電特性。

關鍵字

二氧化鈦 ； 鈦酸鍶 ； 微波 ； 共振腔擾動技術 ； 柱狀共振技術

並列摘要

The microstructure and the microwave dielectric properties of the (1-x)TiO2-xSrTiO3 ceramic system and thin films were investigated. Conventional solid state reaction method was used to fabricate (1-x)TiO2-xSrTiO3 bulk samples for investigation of microwave dielectric properties.
The samples were sintered at 1300℃ for 2h or 1350℃for 2h in air, for measurements. The microwave measurement dielectric properties of the bulk samples were measured by the post resonance method.
The results shows ,by increasing the doping of SrTiO3, ceramic density firstly decreased and then increased, with x＝0.01 sintered at 1350℃ it has the highest density and best dielectric constants of 128, and a dielectric loss of 8.7282〖×10〗^(-4).

The thin films (1-x)TiO2-xSrTiO3(x＝0.05) were deposited by the RF reactive magnetron sputtering method. First, the microwave dielectric properties of thin films deposited at different compositions of oxygen gas were explored by the extended cavity perturbation technique. The deposition process is under the fixed sputtering power, sputtering pressure, deposition time, and doping amount. Second, the substrate was heated to 300℃ to compare the microwave dielectric properties.
From the measurement results, it was found that the heating of the substrate can increase the dielectric constants and the highest dielectric constant was observed on the films obtained under 100% O2 partial pressure.

並列關鍵字

TiO2 ； SrTiO3 ； Microwave ； the Post Resonance Method ； the Extended Cavity Perturbation Technique

參考文獻

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