氧化物奈米線製備及其特性研究

Study on The Preparation and Properties of Oxide Nanowires

葉博鏞(Po-yung Yeh)

指導教授 ： 劉偉隆

國立虎尾科技大學/工程學院/材料科學與綠色能源工程研究所/碩士(2010年)

摘要

氧化矽奈米線及氧化鎂奈米線應用廣泛，若能精確控制使其成長，那實際應用價值將更為提高。本論文主要是利用田口實驗法進行化學氣相沉積法製備氧化矽及氧化鎂奈米線之探討，以期得到較佳奈米線控制反應之參數組合。
田口法選擇出4個實驗因子，分別為催化層之種類、無電鍍析鍍時間、反應時所持的溫度及通入氣體的種類(分別為氧氣、甲烷及水氣)，反應時間為30分鐘；因子皆選擇3個水準，並以L9直交表作為實驗配置。本實驗是在矽晶片及鎂鋰合金個別無電鍍鈷以及鎳薄膜，將試片放入高溫爐管以不同溫度做處理，並通入不同比例的氧氣、甲烷及水氣，反應時間持溫30分鐘。
藉由SEM影像圖可以發現在1100℃氣氛通入75sccm氧氣，可以成功生長出直徑小於100 nm的氧化矽奈米線；由PL量測可以得到此奈米線在400nm~600nm有峰值。在生長氧化鎂奈米線適當的製程參數很重要，如無電鍍鎳須在450℃才可以成功生長出直徑150 nm的氧化鎂奈米線；無電鍍鈷須在250℃以上才可以生長出奈米線，因氣氛比例的不同所生長的奈米線形貌也不同。由TEM觀察可以發現有此製程所生長的氧化矽奈米線其長度為長度1μm以上直徑大小為100 nm；氧化鎂奈米線直徑為50nm長度10μm。

關鍵字

氧化矽 ； 氧化鎂 ； 奈米線 ； 田口實驗

並列摘要

Silica nanowires and magnesia nanowire have wide applications and have better weage if their preparation is under a precise control. This work is to study the preparation of silicon oxide nanowires by chemical vapor deposition method; The Taguchi method was used to find the optimal parameters for the growth of the silica nanowires and magnesia nanowire ; And the growth mechanism for the silicon oxide nanowires was also discussed.
In Taguchi method, there are fire experimental factors: kinds of catalyst film, thicknesses of catalyst film, pickling times of substrate, growth temperatures of silica nanowires and magnesia nanowire, and growth atmosphere of both. The growth time for all silicon oxide nanowires is kept for 30 min. There levels are selected for all experimental factors excepting the kinds of catalyst film which has only three levels. A L9 orthogoual array was used for experiments in Taguchi method.
By SEM image map can be found at 1100 ℃ access 75 sccm oxygen atmosphere can be successfully grown a diameter less than 100nm of silicon oxide nanowires; PL can be measured by the nanowire in this 400 nm~600 nm of the peak. Growth of MgO nanowires in the appropriate process parameters is important, such as electroless nickel to be successful in the 450 ℃ 150 nm diameter growth of magnesium oxide nanowires; electroless cobalt to be over 250 ℃, the growth of the nanoparticles can line, due to the atmosphere by the growing proportion of the different silicon nanowires are also different. Can be found by the TEM observation of this system Chengsuo Sheng-long silica nanowires length of 1μm or more of its length and size of 100 nm; magnesium oxide nanowire diameter of 50nm length of 10μm.

並列關鍵字

Silica ； magnesia ； nanowires ； Taguchi method

參考文獻

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