銅銦硫硒[CuIn(SeS)2]光伏元件吸收層薄膜之製備與特性研究

低成本技術製程對於光伏元件是一個新的趨勢。在此論文中，吾人利用非真空製程製作CuIn(SeS)2太陽能電池吸收層以降低成本。首先利用球磨法製備銅銦硫硒漿料，並以旋轉塗佈方式將CISS漿料塗佈於矽基材上形成CISS前驅層，前驅層藉由燒結方式使CISS薄膜具有黃銅礦結構。漿料是由兩種二元化合物CuS、In2Se3混和所形成，藉由調整化合物比例，我們能獲得Strongly Cu-poor及Slightly Cu-poor兩種類型，使能在不通入硒蒸氣或硒化氫中之有毒氣氛下，經由快速升溫製程獲得CISS薄膜。利用EDS觀察成份之變化、SEM觀察表面形貌與橫截面之薄膜厚度、XRD分析晶體結構。由本實驗結果得知其薄膜厚度約1-2 μm ，CISS之前驅層藉由使用快退升溫退火處理轉變成具有黃銅礦之結構，當溫度於600℃時，顯示出四個CuIn(SeS)2結構之繞射方向（101）、（112）、（220）及（312）；使用較高熱處理溫度時（700℃及750℃），有較大顯著的晶粒結構（約0.7 μm）。

關鍵字

銅銦硫硒；吸收層；黃銅礦；非真空；太陽能電池

並列摘要

Low cost technology processing for photovoltaic device fabrication was a novel tendency. In this work, we present a study on CuIn(SeS)2 thin film of absorber layers for photovoltaic devices prepared by non-vacuum process for lower manufacturing cost. The sub-micron ink was prepared using wet- ball milling, and then the ink was s printed onto a silicon substrate to form a precursor layer by spin coating. The precursor layer was then sintered to form the chalcopyrite structure. The ink consisted of two binary compound powers, CuS and In2Se3. By adjusting the ratio of different powders, we can obtain a strongly Cu-poor and a slightly Cu-poor type with CuIn(SeS)2 thin film by rapid thermal process without toxic Se or H2Se atmosphere. Elemental composition was characterized by using EDS, surface morphology and cross-section of freshly cleaved CISS sample were determined by SEM, crystal structure was analyzed by X-ray diffraction (XRD). The experimental results show the CuIn(SeS)2 precursor layer, with thickness1-2 μm , were transformed into chalcopyrite structure by RTA, as heating at 600℃, the four reflections (101), (112), (200), and(312) of the CuIn(SeS)2 structure became apparent and using higher temperature (700℃and 750℃) for the final heat treatment, demonstrate a significantly larger grain structure (0.7μm).

並列關鍵字

CuIn(SeS)2 ； Absorber layer ； Chalcopyrite ； Non-Vacuum ； Solar cell

參考文獻

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銅銦硫硒[CuIn(SeS)2]光伏元件吸收層薄膜之製備與特性研究

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